Nitrogen-Free Cleaning Composition for Semiconductor Substrates
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Solution Overview
Problem
Existing aqueous post-CMP cleaning compositions for semiconductor substrates face issues such as increased surface roughness, corrosion, and damage to copper surfaces due to redox reactions, galvanic corrosion, and the inability to efficiently remove abrasive particles, leading to defects and the need for strong etchants and organic solvents.
Innovation Solution
Aqueous, nitrogen-free cleaning composition with a pH range of 5 to 8, comprising amphiphilic nonionic surfactants and polycarboxylic acid chelating agents, which effectively removes residues and contaminants without increasing surface roughness, reducing corrosion, and avoiding the use of strong copper inhibitors and organic solvents.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If aqueous alkaline cleaning compositions containing amines and passivating agents are used, then residues and contaminants can be removed from the substrate surface, but surface roughness increases and corrosion occurs due to redox reactions
Solution Approach 1:
The invention changes the chemical parameters of the cleaning composition by using a neutral pH range (5-8) instead of strongly alkaline conditions, and by selecting specific surfactants and chelating agents that do not cause redox reactions, thereby eliminating corrosion and surface roughness while maintaining cleaning effectiveness
Solution Approach 2:
The invention replaces strong, damaging cleaning chemicals with milder, environmentally friendly alternatives consisting of nonionic surfactants and polycarboxylic acids that achieve cleaning without causing harm to the substrate
2Productivity
If strong etchants are used to remove abrasive particles, then particle removal efficiency improves, but damage to copper and dielectric materials increases
Solution Approach 1:
The invention introduces surfactants as intermediary substances that mediate between the cleaning composition and the abrasive particles, enabling particle removal through surfactant-particle interactions rather than through damaging chemical etching of the substrate
Solution Approach 2:
The invention replaces the mechanical/chemical etching mechanism with a surfactant-based cleaning mechanism that relies on surface activity and chelation rather than aggressive chemical reactions, thereby removing particles without damaging the substrate
3Reliability
If nitrogen-containing cleaning compositions are used, then cleaning performance is achieved, but environmental impact increases due to ammonia emissions
Solution Approach 1:
The invention extracts and removes nitrogen-containing components from the cleaning composition, eliminating the source of ammonia emissions while replacing them with nitrogen-free alternatives such as nonionic surfactants and polycarboxylic acids that maintain cleaning performance without environmental harm
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition efficiently removes contaminants and residues without causing etching or corrosion, maintaining surface integrity and avoiding damage to copper and low-k dielectric materials, resulting in high-reliability microelectronic devices with reduced environmental impact.
Implementation Method 1
amphiphilic nonionic surfactants
Implementation Method 2
amphiphilic nonionic, water-soluble or water-dispersible surfactants
Implementation Method 3
polycarboxylic acid chelating agents
Data Source
AI summary
Aqueous, nitrogen-free cleaning composition, preparation and use thereof are provided. The composition having a pH of from 5 to 8 comprises (A) an amphiphilic nonionic, water-soluble or water-dispersible surfactant and (B) a metal chelating agent selected from polycarboxylic acids having at least 3 carboxylic acid groups. The composition is used for removing residues and contaminants from semiconductor substrates.