Nitrogen-Containing Insulating Layers for Semiconductor Memory Stability

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Solution Overview

Problem

Semiconductor memory devices face challenges in achieving high reliability due to fluctuations in electrical characteristics and threshold voltage, which affect the performance and stability of memory cells.

Innovation Solution

Incorporating intermediate insulating layers with nitrogen, such as silicon nitride, between conductive layers in a semiconductor memory device, which helps stabilize electrical characteristics by controlling the threshold voltage and current flow.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional insulating layers are used between conductive layers, then the device structure is simple, but electrical characteristics fluctuate and reliability decreases

Engineering Contradiction:

Improveoperational reliabilityVSAvoidlayer structure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent introduces intermediate insulating layers containing nitrogen (such as silicon nitride) between the first and second intermediate insulating layers. These nitrogen-containing layers act as mediators that stabilize the electrical characteristics of memory cells by controlling threshold voltage and current flow, thereby improving operational reliability without significantly complicating the overall device structure

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent modifies the chemical composition parameter of the insulating layers by incorporating nitrogen-containing materials (silicon nitride) at specific positions. This parameter change alters the electrical properties of the insulating structure, stabilizing threshold voltage and improving current flow characteristics, which directly addresses the reliability issue

Inventive Principle:

Principle #35Parameter changes

2Reliability

If nitrogen-containing insulating layers are added, then electrical characteristics are stabilized, but manufacturing process becomes more complex

Engineering Contradiction:

Improveelectrical characteristic stabilityVSAvoidmanufacturing process simplicity

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The patent divides the insulating layer structure into multiple segments, with nitrogen-containing insulating layers positioned at specific locations between the first and second intermediate insulating layers. This segmentation allows the nitrogen-containing layers to be formed using separate deposition processes, making the manufacturing complexity manageable while achieving the desired electrical stabilization

Inventive Principle:

Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The use of nitrogen-containing insulating layers stabilizes the electrical characteristics of memory cells, reducing threshold voltage fluctuations and improving current flow, thereby enhancing the reliability and performance of semiconductor memory devices.

Implementation Method 1

at least one of the first intermediate insulating layer or the second intermediate insulating layer includes a material different from a material of the intermediate partial region

Methodology Applied

Scientific EffectNitrogen incorporation effect:

Data Source

PatentUS9806092B1Semiconductor memory device and methods for manufacturing the same

Publication Date: 2017.10.31 KIOXIA CORP

AI summary

According to one embodiment, a semiconductor memory device includes first to fourth conductive layers, a first intermediate insulating layer, a second intermediate insulating layer, an inter-layer insulating layer, a first semiconductor body, a first memory layer, a second semiconductor body, a second memory layer, and a first interconnect. The second conductive layer is separated from the first conductive layer in a first direction. The third conductive layer is arranged with the first conductive layer in a second direction crossing the first direction. The fourth conductive layer is separated from the third conductive layer in the first direction and arranged with the second conductive layer in the second direction. The first intermediate insulating layer is provided between the first conductive layer and the third conductive layer. The second intermediate insulating layer is provided between the second conductive layer and the fourth conductive layer.