Nitrogen-Containing Interlayer for FinFET Contact Resistance
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Solution Overview
Problem
In semiconductor devices, particularly FinFETs, reducing contact resistance in smaller three-dimensional structures is a challenge, and existing methods struggle to effectively lower the Schottky barrier height, which affects the performance of source/drain contact regions.
Innovation Solution
The introduction of an ultrathin nitrogen-containing interlayer between the metal and semiconductor materials helps reduce contact resistance by forming a nitrogen-containing layer with a high nitrogen content, which in turn lowers the Schottky barrier height, thereby improving the contact resistance in source/drain regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If conventional metal-semiconductor contact structures are used in nanometer FinFET devices, then device scaling is achieved, but contact resistance increases due to higher Schottky barrier height
Solution Approach 1:
An ultrathin interlayer (5-20 nm) composed of nitrogen-containing material is introduced between the metal contact and the semiconductor source/drain region. This interlayer acts as an intermediary that reduces the Schottky barrier height at the metal-semiconductor interface, enabling effective charge carrier transport while maintaining the scaled device dimensions. The nitrogen-containing interlayer modifies the interface properties to achieve lower contact resistance without compromising the miniaturization benefits.
2Reliability
If the Schottky barrier height is reduced by material selection, then contact resistance decreases, but device complexity increases
Solution Approach 1:
The nitrogen content in the interlayer is optimized within a specific range (5-20 nm thickness) to achieve the desired Schottky barrier reduction. By controlling the nitrogen concentration and layer thickness parameters, the contact resistance is minimized while maintaining a relatively simple contact structure. This parameter optimization allows effective barrier reduction without requiring complex multi-layer or heterogeneous contact architectures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces contact resistance and improves the performance of source/drain regions by forming a nitrogen-containing layer that enhances the interface between the metal and semiconductor, leading to better electrical characteristics.
Implementation Method 1
The introduction of an ultrathin nitrogen-containing interlayer between the metal and semiconductor materials helps reduce contact resistance by forming a nitrogen-containing layer with a high nitrogen content, which in turn lowers the Schottky barrier height
Data Source
AI summary
A semiconductor device includes a gate structure disposed over a channel region, a source/drain epitaxial layer disposed at a source/drain region, a nitrogen containing layer disposed on the source/drain epitaxial layer, a silicide layer disposed on the nitrogen containing layer, and a conductive contact disposed on the silicide layer.