Nitrogen Oxide Passivation Layer for Hydrogen Diffusion in Oxide TFTs
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Solution Overview
Problem
Oxide TFT display panels face reliability issues due to hydrogen atoms in passivation layers or gate insulating films reacting with or diffusing into the oxide active layers, making them conductive and affecting their functionality.
Innovation Solution
A thin-film transistor (TFT) display panel is fabricated using a passivation layer composed of nitrogen oxide (NOx) to prevent hydrogen diffusion, enhancing electrical properties and reliability by forming gate wiring, oxide active layers, data wiring, and pixel electrodes on a substrate with a nitrogen oxide passivation layer that does not contain hydrogen.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional passivation layer is used, then the fabrication process is simple, but hydrogen atoms diffuse into the oxide active layer making it conductive and reducing reliability
Solution Approach 1:
The passivation layer material composition is changed from conventional hydrogen-containing materials to nitrogen oxide (NOx), which has different chemical properties that prevent hydrogen diffusion into the oxide active layer, thereby maintaining electrical stability
Solution Approach 2:
The patent addresses the harmful effect of hydrogen diffusion by using nitrogen oxide, which not only prevents hydrogen contamination but also provides additional benefits such as improved interface quality and electrical characteristics of the oxide TFT
2Reliability
If multiple process steps are added to prevent hydrogen diffusion, then reliability improves, but fabrication time increases
Solution Approach 1:
The nitrogen oxide passivation layer is formed during the standard fabrication process to preemptively prevent hydrogen diffusion, eliminating the need for additional post-processing steps or complex multi-layer structures that would extend fabrication time
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of a nitrogen oxide passivation layer improves the stability and electrical properties of the TFT display panel by preventing hydrogen-induced conductivity issues, resulting in enhanced current and voltage stability and extended operational lifespan.
Implementation Method 1
If the passivation layer or the gate insulating film contains hydrogen atoms, the hydrogen atoms may react with or diffuse into the oxide active layer patterns. Accordingly, the oxide active layer patterns may become conductive
Data Source
AI summary
Provided is a thin-film transistor (TFT) display panel having improved electrical and reliability properties and a method of fabricating the TFT display panel. The TFT display panel includes gate wiring formed on a substrate; an oxide active layer pattern formed on the gate wiring; data wiring formed on the oxide active layer pattern to cross the gate wiring; a passivation layer formed on the oxide active layer pattern and the data wiring and made of nitrogen oxide; and a pixel electrode disposed on the passivation layer.