Nitrogen Passivation for High-Aspect-Ratio Via Filling Reliability
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Solution Overview
Problem
Conductive vias in semiconductor packaging face challenges with high aspect ratios, leading to reliability issues and increased process time due to voids and poor adhesion in high-density electronic devices.
Innovation Solution
A passivation layer containing nitrogen is applied on the buffer layer within via holes to prevent surface oxidation, ensuring the conductive layers adhere well and fill without defects, improving reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the density of electronic units mounted on the substrate is increased to improve device performance, then the device performance is improved, but the aspect ratio of conductive vias increases leading to reliability issues and process time increase
Solution Approach 1:
A buffer layer is introduced as an intermediary between the substrate and the conductive via filling process. This buffer layer modifies the surface properties of the substrate, enabling better adhesion and facilitating complete filling of high aspect ratio vias without voids, thus resolving the reliability issue while maintaining high device density
Solution Approach 2:
The invention changes the surface parameters of the substrate by depositing a buffer layer with specific physical and chemical properties. This modification allows the conductive material to adhere properly and fill the via completely, transforming the unfavorable high aspect ratio geometry into a reliable conductive structure
2Productivity
If the density of electronic units mounted on the substrate is increased to improve device performance, then the device performance is improved, but the process time increases due to difficulties in filling high aspect ratio vias
Solution Approach 1:
The buffer layer acts as a mediator that facilitates the filling process of high aspect ratio vias. By modifying the surface energy and wettability, it enables complete filling in a single process step, avoiding time-consuming multi-step processes or repeated attempts
Solution Approach 2:
The buffer layer is deposited in advance before the conductive via filling process. This preliminary action prepares the substrate surface with optimal properties for subsequent filling, ensuring that the via can be completely filled in one step without requiring additional processing time
3Ease of manufacture
If conventional filling methods are used in high aspect ratio vias, then the process is simple, but voids form in the conductive layer affecting resistivity and reliability
Solution Approach 1:
The buffer layer serves as an intermediary that enables conventional filling methods to produce high-quality results in high aspect ratio vias. It modifies the surface properties to ensure proper wetting and adhesion, allowing the conductive material to flow completely into the via and form a void-free structure
Solution Approach 2:
By changing the surface parameters of the substrate through buffer layer deposition, the invention transforms the filling process outcome. The modified surface properties enable complete filling even with simple conventional methods, achieving both ease of manufacture and high manufacturing precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances the reliability of electronic devices by preventing voids and improving adhesion of conductive layers in high aspect ratio via holes, thus enhancing the overall performance and reducing defects.
Implementation Method 1
the passivation layer, at least containing nitrogen, is disposed on the buffer layer, so as to prevent the surface oxidation
Data Source
AI summary
The present disclosure provides an electronic device including a substrate having a first surface and a second surface opposite to the first surface, a via hole penetrating the substrate and having a sidewall connecting the first surface and the second surface, a buffer layer disposed on the substrate and the sidewall of the through hole, a passivation layer disposed on the buffer layer and at least containing nitrogen, a first conductor layer disposed on the passivation layer, a second conductor layer disposed on the first conductor layer, and an electronic unit disposed on the second conductor layer.