Nitrogen-Patterned Semiconductor Openings for Low Contact Resistance
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Solution Overview
Problem
The complexity of manufacturing and integration in semiconductor devices leads to inefficiencies and a need for improved processes to reduce costs and increase design flexibility.
Innovation Solution
A method involving the formation of a nitrogen-containing pattern over a semiconductor substrate, followed by an energy treating process to create transformed portions, which are used as etching masks to form opening structures and isolation structures, allowing for reduced contact resistance without increasing active area size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If traditional manufacturing and integration processes are used for semiconductor devices, then device functionality and integration can be achieved, but manufacturing complexity and costs increase
Solution Approach 1:
The method performs preliminary actions by forming a nitrogen-containing pattern on the semiconductor substrate before the main etching process. This pattern serves as a pre-prepared mask structure that guides subsequent etching operations, eliminating the need for complex multi-step masking processes and reducing overall manufacturing complexity while maintaining design flexibility
Solution Approach 2:
The nitrogen-containing pattern serves multiple functions: it acts as an etching mask, defines the opening structure geometry, and enables contact hole formation. This multi-functional approach replaces multiple separate process steps with a single integrated process, reducing manufacturing complexity and improving design flexibility
2Reliability
If conventional etching processes are used, then opening structures can be formed, but contact resistance increases and active area must be enlarged
Solution Approach 1:
The method applies local quality by creating a nitrogen-containing pattern specifically at the contact hole location before etching. This localized nitrogen enrichment modifies the etching characteristics only in the required area, enabling precise control of contact hole formation with low contact resistance without increasing the overall active area size
Solution Approach 2:
The method changes the chemical composition parameter of the semiconductor substrate surface by introducing nitrogen-containing compounds at specific locations. This parameter change (nitrogen concentration) modifies the etching rate and quality locally, enabling formation of high-quality contact holes with low resistance without expanding the active area
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces fabrication costs and time while enhancing design flexibility by achieving lower contact resistance and efficient semiconductor device structure formation.
Implementation Method 1
performing an energy treating process to form a transformed portion in the semiconductor substrate and covered by the nitrogen-containing pattern
Implementation Method 2
performing an etching process on the semiconductor substrate using the transformed portion as an etching mask
Data Source
AI summary
A method for preparing a semiconductor device structure includes forming a nitrogen-containing pattern over a semiconductor substrate. The method also includes performing an energy treating process to form a transformed portion in the semiconductor substrate and covered by the nitrogen-containing pattern. The method further includes etching the semiconductor substrate such that the transformed portion is surrounded by an opening structure.