Nitrogen Semiconductor Device Quantum Well Carrier Injection
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Solution Overview
Problem
Conventional semiconductor devices face challenges in enhancing carrier concentration and combination efficiency between active layers, particularly in quaternary AlInGaN semiconductor layers.
Innovation Solution
A nitrogen-containing semiconductor device is designed with a multiple quantum well layer and doped semiconductor layers, including AlInGaN layers with varying dopant concentrations and thicknesses, to facilitate carrier injection and combination, thereby improving light emitting efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a quaternary AlInGaN semiconductor layer is used to facilitate carrier combination, then electron-hole combination efficiency is improved, but carrier concentration remains insufficient
Solution Approach 1:
The patent divides the semiconductor structure into multiple quantum well layers (InGaN) and barrier layers (GaN), creating a segmented structure that enhances carrier confinement and combination efficiency while maintaining high carrier concentration through distributed doping across multiple layers
Solution Approach 2:
The patent employs a composite structure combining InGaN well layers with GaN barrier layers, and integrates multiple dopant materials (Mg, C, Si) within the AlInGaN layers to achieve both high carrier concentration and efficient carrier combination through material composition optimization
2Quantity of substance
If magnesium or carbon is added in high concentration to the semiconductor layer, then carrier concentration is increased, but light emitting efficiency remains insufficient
Solution Approach 1:
The patent applies local quality by doping Mg and C specifically in the AlInGaN layers adjacent to the multiple quantum well structure, rather than uniformly throughout the entire device, thereby locally enhancing carrier concentration where it most benefits light emitting efficiency while avoiding degradation in other regions
Solution Approach 2:
The patent optimizes the concentrations of Mg (>10^19 cm^-3) and C (>10^17 cm^-3) as adjustable parameters in the AlInGaN layers, and varies Al composition (x1, x2 values) to achieve the optimal balance between carrier concentration and light emitting efficiency through parameter tuning
Data Source
AI summary
A nitrogen-containing semiconductor device including a first type doped semiconductor layer, a multiple quantum well layer and a second type doped semiconductor layer is provided. The multiple quantum well layer includes barrier layers and well layers, and the well layers and the barrier layers are arranged alternately. The multiple quantum well layer is located between the first type doped semiconductor layer and the second type doped semiconductor layer, and one of the well layers of the multiple quantum well layer is connected to the second type doped semiconductor layer.