Nitrogen-Treated Silicon Pillars to Prevent Oxide-Induced Rounding
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving precise control of element configuration due to undesired oxidation of silicon pillars, leading to rounding of edges and uneven surfaces, which results in reduced contact area and electrical disconnection or high electric resistance.
Innovation Solution
A method involving nitrogen treatment to prevent oxidation during the formation of oxide materials, ensuring a planar surface of silicon pillars by forming a residual nitrogen film that protects the silicon from oxidation, followed by conformal oxide and dielectric layer deposition to maintain the planarity of the surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If oxide material is formed over silicon pillars, then oxide layer coverage is improved, but pillar surface planarity deteriorates due to rounding
Solution Approach 1:
A nitrogen treatment is performed on the silicon pillars before oxide formation to create a nitrogen-containing protective layer on the pillar surfaces. This preliminary action prevents oxidation during subsequent oxide layer formation, maintaining pillar surface planarity while still allowing conformal oxide deposition in the spaces between pillars.
Solution Approach 2:
Nitrogen acts as an intermediary substance that forms a protective barrier between the silicon pillars and the oxidizing environment. The nitrogen-containing layer deposited on pillar surfaces during nitrogen treatment serves as a mediator that prevents direct oxidation of silicon, thereby preserving surface planarity during the oxide formation process.
2Manufacturing precision
If nitrogen treatment is performed to prevent oxidation, then pillar surface planarity is improved, but process complexity increases
Solution Approach 1:
The nitrogen treatment modifies the chemical composition parameter of the pillar surface by introducing nitrogen-containing species. This parameter change creates a protective layer that prevents oxidation, improving surface planarity. The treatment can be implemented as a separate process step or integrated into existing process sequences, with the complexity increase offset by the elimination of subsequent rounding correction steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method improves device performance and product yield by preventing rounding and ensuring stable electrical connections between silicon pillars and landing pads.
Implementation Method 1
A nitridation is performed on the pillars. A residual nitrogen is partially disposed on sidewalls of the pillars proximal to the top surfaces of the pillars.
Implementation Method 2
prevent rounding from occurring during formation of an oxide material... preventing oxidation during the formation of oxide materials
Data Source
AI summary
The present application provides a semiconductor structure and a manufacturing method of the semiconductor structure. The semiconductor structure includes a substrate, a residual nitrogen, an oxide layer, a plurality of first contacts, and a plurality of second contacts. The substrate includes a plurality of pillars in an array region of the substrate, wherein a top surface of each of the plurality of pillars is a substantially planar surface. The residual nitrogen is partially disposed on sidewalls of the pillars proximal to the top surfaces of the pillars. The oxide layer surrounds each of the pillars. The plurality of first contacts extends from the top surfaces of the pillars into the pillars. The plurality of second contacts extends from the top surface of the first dielectric layer into the first dielectric layer.