NMOS Data Output Circuit for Faster Storage Interface Switching

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Solution Overview

Problem

Existing semiconductor storage systems face challenges in achieving high data transmission rates, which are insufficient to meet the increasing demands of users.

Innovation Solution

The proposed storage system incorporates a data output unit with a pull-up unit and a pull-down unit, both implemented as NMOS transistors, along with switch units to facilitate efficient data transmission. This configuration allows for rapid voltage transitions from low to high or high to low, thereby enhancing data transmission speed.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If conventional data transmission structures are used, then device complexity is reduced, but data transmission rate is insufficient

Engineering Contradiction:
Improvedata transmission rateVSAvoiddevice complexity
Core Design Contradiction:
SpeedVSDevice complexity

Solution Approach 1:

The data output unit is segmented into separate pull-up and pull-down units, each independently controlled by switch units. This segmentation allows simultaneous voltage transitions in opposite directions, doubling the effective data transmission rate without proportionally increasing overall device complexity

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent implements dynamic control of the pull-up and pull-down units through switch units that can independently activate each unit based on data requirements. This dynamic switching capability enables rapid voltage transitions and improves data transmission speed while maintaining manageable device complexity through controlled activation

Inventive Principle:
Principle #15Dynamics

2Speed

If separate pull-up and pull-down units are used, then voltage transition speed is improved, but manufacturing complexity increases

Engineering Contradiction:
Improvevoltage transition speedVSAvoidmanufacturing complexity
Core Design Contradiction:
SpeedVSEase of manufacture

Solution Approach 1:

The pull-up unit and pull-down unit share common semiconductor structures including substrate, isolation layers, and electrode connections. This merging of common structures reduces manufacturing steps and complexity while maintaining the performance benefits of separate pull-up and pull-down units for rapid voltage transitions

Inventive Principle:
Principle #5Merging (Combining)

3Speed

If rapid voltage transitions are implemented, then data transmission rate increases, but energy consumption increases

Engineering Contradiction:
Improvedata transmission rateVSAvoidenergy consumption
Core Design Contradiction:
SpeedVSUse of energy by moving object

Solution Approach 1:

The switch units dynamically activate only the necessary pull-up or pull-down unit based on the required voltage transition direction. This dynamic control prevents simultaneous activation of both units, reducing unnecessary energy consumption while maintaining rapid voltage transition speeds for high data transmission rates

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The control logic provides feedback control to the switch units, activating pull-up or pull-down units only when needed based on the current voltage state and data requirements. This feedback mechanism optimizes energy usage by avoiding redundant voltage transitions while maintaining high data transmission performance

Inventive Principle:
Principle #23Feedback

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The storage system achieves increased data transmission rates and improved performance by reducing the time required for voltage conversions and optimizing the layout and manufacturing process through shared semiconductor structures.

Implementation Method 1

a pull-up unit and a pull-down unit, both implemented as NMOS transistors... allows for rapid voltage transitions from low to high or high to low

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentEP4030431B1Storage system
Publication Date: 2025.01.29 CHANGXIN MEMORY TECH INC
  • EP4030431B1 patent drawingFigure 1~2
  • EP4030431B1 patent drawingFigure 3~4
  • EP4030431B1 patent drawingFigure 5~6

AI summary

The present disclosure provides a storage system including a data port. The data port includes a data output unit. The data output unit includes: a pull-up unit, having a control terminal, a first terminal and a second terminal, a first input signal being inputted to the control terminal, the first terminal being electrically connected to a power supply, the second terminal being connected to an output terminal of the data output unit, and the pull-up unit being a first NMOS transistor; and a pull-down unit, having a control terminal, a first terminal and a second terminal, a second input signal being inputted to the control terminal, the first terminal being electrically connected to a ground terminal, and the second terminal being connected to the output terminal of the data output unit. The present disclosure has the following advantages. The pull-up unit and the pull-down unit are provided, wherein the pull-up unit is an NMOS transistor, so that a voltage of the data output unit can be effectively accelerated from low to high or from high to low; that is, the time of conversion of the voltage of the data output unit from low to high or from high to low is reduced, thereby increasing a data transmission speed and improving the performance of the storage system.