Noble Metal Deposition Material Purity for Bumping Suppression
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Solution Overview
Problem
The bumping phenomenon during vacuum vapor deposition leads to increased production costs and equipment contamination due to impurity components like iron, silicon, and carbon-based compounds, despite using high-purity noble metal materials.
Innovation Solution
The noble metal vapor deposition material is manufactured to have reduced surface and internal impurities of Fe < 10 wt% and 10 wtppm, Si < 10 wt% and 10 wtppm, and C < 10 wt% and 10 wtppm, using specific crucibles and controlled heat treatments to minimize contamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional vapor deposition materials are used, then the deposition process can proceed, but the bumping phenomenon occurs causing molten droplets to adhere to the thin film
Solution Approach 1:
The invention changes the chemical composition parameters of the vapor deposition material by strictly limiting impurity content (Fe: 10 wtppm or less, Si: 10 wtppm or less, C: 10 wtppm or less). This parameter control prevents the bumping phenomenon during electron beam heating, ensuring stable deposition without molten droplet adhesion.
Solution Approach 2:
The invention applies different purity requirements to different elements in the vapor deposition material. Specific impurities (Fe, Si, C) are controlled at 10 wtppm or less, while other elements may have different tolerance levels. This localized quality control targets the specific impurities that cause bumping while maintaining overall material functionality.
2Ease of manufacture
If impurity levels are not controlled, then manufacturing is simpler, but production costs increase due to equipment contamination and reduced yield
Solution Approach 1:
The invention implements preliminary purification actions during material manufacturing by controlling impurity levels at the source. Fe, Si, and C are limited to 10 wtppm or less in the raw vapor deposition material before it reaches the deposition equipment. This preliminary action prevents downstream equipment contamination and production losses.
Solution Approach 2:
The invention converts the potentially harmful effect of impurities into a benefit by establishing specific impurity thresholds (10 wtppm or less for Fe, Si, C). By controlling impurities to this level, the material maintains manufacturability while preventing bumping phenomenon, thus converting what would be a harmful contamination issue into a controlled quality parameter that ensures high-yield production.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effectively suppresses the bumping phenomenon, reducing substrate contamination and improving production efficiency and yield by minimizing impurity-related issues.
Implementation Method 1
When a vapor deposition material is filled in a crucible and melted using an electron beam
Implementation Method 2
melted using an electron beam or the like
Implementation Method 3
heating a vapor deposition material in a vacuum, and the vapor deposition material that becomes gas molecules
Implementation Method 4
the vacuum vapor deposition method is a technique in which a thin film is formed by heating a vapor deposition material in a vacuum, and the vapor deposition material that becomes gas molecules adhering to a substrate
Data Source
AI summary
An object of the present disclosure is to provide a noble metal vapor deposition material for use in a vacuum vapor deposition method capable of suppressing the occurrence of the bumping phenomenon during vacuum vapor deposition. Provided is a vapor deposition material composed of a noble metal, wherein, when a surface area of 50 μm×50 μm of the vapor deposition material is analyzed using energy dispersive X-ray spectroscopy, Fe is less than 10 wt %, and when analysis is performed using ICP atomic emission spectroscopy, Fe is 10 wtppm or less.