Non-Active Fin Isolation for Leakage Reduction in FinFET Devices
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Solution Overview
Problem
Existing semiconductor devices with FinFET structures face issues of undesirable leakage current due to processes forming source/drain regions and separating gate electrodes.
Innovation Solution
Incorporating non-active fins between active fins in semiconductor devices, with gate separating patterns on these non-active fins to block leakage current, and optimizing the arrangement and material selection to minimize stress and process variations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If non-active fins are disposed between active fins, then leakage current is reduced and operating characteristics are improved, but device complexity and manufacturing process difficulty increase
Solution Approach 1:
The fin structure is segmented into active fins and non-active fins, where non-active fins are strategically placed between active fins to act as isolation elements. This segmentation allows the device to maintain electrical separation and reduce leakage current while preserving the functionality of active regions.
Solution Approach 2:
Non-active fins serve as intermediary structures between active fins and source/drain regions. These intermediary elements provide physical and electrical separation, preventing direct interaction that would cause leakage while allowing the overall device structure to function properly.
2Reliability
If non-active fins are used to separate source/drain regions, then leakage current is reduced, but manufacturing precision requirements increase
Solution Approach 1:
Non-active fins are formed as part of the preliminary fin structure creation process, before source/drain regions are defined. This preliminary arrangement of alternating active and non-active fins establishes the spacing and separation geometry early in manufacturing, ensuring precision is built into the structure rather than added later.
Solution Approach 2:
The pitch and spacing parameters of the fin structure are optimized to accommodate both active and non-active fins in an alternating pattern. By carefully selecting these geometric parameters, the design achieves adequate separation for leakage reduction while remaining compatible with standard manufacturing capabilities.
3Adaptability or versatility
If multiple gate electrodes are disposed on active fins, then device functionality is enhanced, but leakage current between gates increases
Solution Approach 1:
The gate structure is segmented by positioning non-active fins between regions with different gate electrodes. This segmentation creates natural electrical isolation zones that prevent leakage current from flowing between adjacent gates while allowing each gate to independently control its associated active fin region.
Solution Approach 2:
Non-active fins act as intermediary isolation structures between gate-controlled regions. These intermediary elements provide the necessary electrical separation to prevent gate-to-gate leakage while maintaining the multi-gate functionality needed for enhanced device performance.
Data Source
AI summary
A semiconductor device includes a substrate having a plurality of fins protruding therefrom. The plurality of fins includes a plurality of active fins and at least one non-active fin disposed between ones of the plurality of active fins. The device also includes at least one gate electrode crossing at least a portion of the active fins. The device further includes a plurality of source/drain regions disposed on the active fins adjacent the at least one gate electrode and separated from one another by the at least one non-active fin.