Non-Classical Light Source Device via Dressed Photon Phonon Annealing
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Solution Overview
Problem
Current non-classical light source devices are complex and inefficient in emitting non-classical light, which is essential for applications like quantum cryptographic communication and optical coherence tomography, due to the lack of a simple and effective method for producing non-classical light with high intensity correlation function g(2)(τ) satisfying g(2)(0)<g(2)(τ) (τ≠0).
Innovation Solution
A non-classical light source device is manufactured using a semiconductor structure with a pn junction and a plurality of light-emitting regions, where the semiconductor regions are made of indirect bandgap materials, and the second impurity is diffused using dressed photon phonon-assisted annealing (DPP annealing) at specific temperature and current conditions, enabling the emission of non-classical light with antibunching properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional methods are used to produce non-classical light, then the light emission can be achieved, but the device configuration becomes complex and the emission efficiency is low
Solution Approach 1:
The patent applies parameter changes by utilizing dressed photon phonons to compensate for momentum differences in indirect bandgap semiconductors, enabling efficient non-classical light emission at specific temperature ranges (higher than -40°C and lower than 15°C). This changes the operational parameters to achieve high emission efficiency with a simple pn junction structure, resolving the contradiction between emission efficiency and device complexity
Solution Approach 2:
The patent introduces dressed photon phonons as an intermediary mechanism that mediates the momentum conservation process during light emission in indirect bandgap semiconductors. This intermediary enables efficient non-classical light emission without requiring complex cavity structures or resonators, thus achieving high productivity with simple device configuration
2Manufacturing precision
If ion implantation is used to introduce impurities, then the semiconductor structure can be formed, but the manufacturing process becomes complex and time-consuming
Solution Approach 1:
The patent replaces the mechanical ion implantation process with a thermal diffusion process assisted by dressed photon phonons. Instead of physically implanting ions into the semiconductor lattice, the method uses light irradiation and thermal energy to enable impurity atoms to diffuse into desired positions, substituting a complex mechanical process with a simpler thermal-optical process that achieves comparable precision
Solution Approach 2:
The patent applies preliminary action by pre-forming the semiconductor structure with impurity regions before the actual light emission operation. The impurity distribution is established through a simplified diffusion process that prepares the material in advance, eliminating the need for complex ion implantation steps during device fabrication
3Productivity
If direct bandgap semiconductors are used, then light emission is efficient, but non-classical light with antibunching properties cannot be produced
Solution Approach 1:
The patent changes the fundamental parameter of semiconductor bandgap type from direct to indirect, and compensates for the resulting efficiency loss by introducing dressed photon phonon assistance. This parameter change enables the production of non-classical light with antibunching properties while maintaining practical emission intensity through the phonon-mediated momentum conservation mechanism
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device achieves efficient emission of non-classical light with antibunching properties, suitable for applications in quantum cryptography and optical coherence tomography, by utilizing dressed photon phonons to compensate for momentum differences and produce light with lower energy than the bandgap, resulting in improved performance and simplicity.
Implementation Method 1
irradiating the semiconductor structure with light in the presence of a forward current flowing through the semiconductor structure while the semiconductor structure is in thermal contact with a cooling base at a temperature higher than −40° C. and lower than 15° C., thereby diffusing the second impurity
Implementation Method 2
while the semiconductor structure is in thermal contact with a cooling base at a temperature higher than −40° C. and lower than 15° C.
Implementation Method 3
irradiating the semiconductor structure with light in the presence of a forward current flowing through the semiconductor structure while the semiconductor structure is in thermal contact with a cooling base at a temperature higher than −40° C. and lower than 15° C., thereby diffusing the second impurity
Implementation Method 4
a semiconductor structure including a first semiconductor region having a first impurity of a first conductivity type that is one of p-type and n-type and a second semiconductor region having a second impurity of a second conductivity type that is the other of p-type and n-type
Data Source
AI summary
A method of manufacturing a non-classical light source device includes: providing a semiconductor structure that includes a first semiconductor region having a first impurity of a first conductivity type that is one of p-type or n-type, and a second semiconductor region having a second impurity of a second conductivity type that is the other of p-type or n-type; and irradiating the semiconductor structure with laser light in the presence of a forward current flowing through the semiconductor structure while the semiconductor structure is in thermal contact with a cooling base at a temperature higher than −40° C. and lower than 15° C., thereby diffusing the second impurity.