Non-Continuous Line Pattern via Directed Self-Assembly
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The photolithography process in semiconductor device fabrication faces limitations in achieving smaller device sizes and higher integration densities, leading to increased costs and complexity in developing new equipment and processes.
Innovation Solution
A method utilizing directed self-assembly (DSA) materials to form non-continuous line patterns on semiconductor substrates through phase separation and selective etching, allowing for the creation of alternating polymer structures without the need for advanced equipment like ArF laser tools.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If traditional photolithography process is used to decrease device size, then device dimensions are reduced, but manufacturing cost and process complexity increase dramatically
Solution Approach 1:
The block copolymer material performs self-assembly through spontaneous phase separation into hexagonal cylindrical patterns, eliminating the need for complex photomask alignment and exposure processes. The material automatically organizes itself into the desired pattern structure based on its inherent block copolymer architecture, where one block forms cylindrical domains in a matrix of the other block.
Solution Approach 2:
The patent changes the physical and chemical parameters of the patterning system by using block copolymer materials with specific molecular weights, block ratios, and chemical compositions. By adjusting parameters such as the fraction of each block, annealing temperature, and substrate conditions, the system achieves self-organized patterns at dimensions below traditional photolithography capabilities without increasing process complexity.
2Manufacturing precision
If ArF laser tools and immersion photolithography are used to improve resolution, then critical dimension and resolution are improved, but equipment cost increases dramatically
Solution Approach 1:
The patent replaces the complex optical-mechanical photolithography system (ArF laser tools, immersion lenses, photomasks) with a chemical self-assembly system using block copolymers. The patterning function is achieved through spontaneous molecular organization rather than external optical exposure, eliminating the need for expensive high-resolution lithography equipment.
Solution Approach 2:
The block copolymer structure serves as a self-generated template or copy of the desired pattern. The material's internal block architecture automatically replicates the target pattern geometry through phase separation, eliminating the need for external photomask templates and complex optical copying systems.
3Stability of the object's composition
If continuous line patterns are formed using traditional methods, then pattern continuity is achieved, but it is difficult to achieve the required critical dimension and spacing
Solution Approach 1:
The patent uses the natural phase-separated structure of block copolymers where one block forms discrete cylindrical segments within a continuous matrix of the other block. This segmentation provides both continuity (through the matrix) and discrete positioning (through the cylindrical domains), achieving the required critical dimensions and spacing that are difficult to obtain with traditional continuous line patterning methods.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of fine non-continuous line patterns with improved critical dimensions and reduced fabrication costs by leveraging the properties of DSA materials and simpler etching processes, avoiding the need for expensive tools and complex processes.
Implementation Method 1
performing a phase separation of the DSA material layer to form an ordered periodic pattern, wherein the ordered periodic pattern includes a plurality of first polymer structures and a plurality of second polymer structures arranged alternately
Data Source
AI summary
A method of forming a non-continuous line pattern includes forming a DSA material layer on a substrate, performing a phase separation of the DSA material layer to form an ordered periodic pattern including a plurality of first polymer structures and the second polymer structures arranged alternately, forming a first mask to cover a first portion of the ordered periodic pattern, performing a first etching process to remove a portion of the first polymer structures exposed by the first mask, removing the first mask, forming a second mask to cover a second portion of the ordered periodic pattern, with an interval to the first portion of the ordered periodic pattern, performing a second etching process to remove a portion of the second polymer structures exposed by the second mask, and removing the second mask. The remaining first polymer structures and the remaining second polymer structures are not connected to each other.