Non-DCOPC Optical Proximity Correction Method
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Solution Overview
Problem
Conventional delta-chrome optical proximity correction (DCOPC) methods face challenges due to high computational complexity and time requirements in accurately compensating nonlinear patterning effects in semiconductor manufacturing, particularly in the deep sub-wavelength regime, where mask topographic, resist development, and etching proximity effects become significant.
Innovation Solution
A non-delta-chrome optical proximity correction (non-DCOPC) method that involves defining control points, evaluating target and actual measurement values at specific points, computing comparison values, and iteratively updating control points to generate an updated layout, using a dense simulator, decision device, and layout updating device to optimize the patterning process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If DCOPC method is used to compensate nonlinear patterning effects, then manufacturing precision is improved, but productivity deteriorates due to large computational complexity and long run time
Solution Approach 1:
The patent segments the continuous chrome adjustment problem into discrete segments by dividing the layout into multiple segments and evaluating each segment independently. This allows the complex DCOPC computation to be broken down into smaller, manageable pieces that can be processed more efficiently while maintaining correction accuracy.
Solution Approach 2:
The patent extracts and removes the computationally intensive mask perturbation response computation step from the iterative DCOPC process. By taking out this expensive calculation and replacing it with a simplified evaluation method based on pre-computed sensitivity matrices, the method maintains correction precision while dramatically reducing run time.
2Manufacturing precision
If DCOPC method is used to compensate nonlinear patterning effects, then manufacturing precision is improved, but device complexity increases due to complex computation of mask perturbation response
Solution Approach 1:
The patent performs preliminary actions by pre-computing sensitivity matrices and response characteristics before the actual OPC iteration. These pre-computed data structures are stored and reused during the correction process, eliminating the need to re-compute mask perturbation responses during each iteration and significantly simplifying the computational complexity.
Solution Approach 2:
The patent uses copying by creating simplified models and approximations of the complex mask perturbation response through pre-computed sensitivity matrices. Instead of performing expensive real-time computations, the method copies and reuses pre-calculated response data, maintaining accuracy while reducing computational complexity.
3Manufacturing precision
If DCOPC method is used to compensate nonlinear patterning effects, then manufacturing precision is improved, but loss of time increases due to iterative computation until EPE value is satisfied
Solution Approach 1:
The patent applies partial action by performing a limited number of correction iterations rather than continuing until full convergence. By using pre-computed sensitivity matrices to guide corrections, the method achieves sufficient precision with fewer iterations, reducing the time loss associated with extensive iterative computation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces computational time and memory usage while maintaining correction accuracy, offering advantages over DCOPC methods in terms of run time and correction efficiency, especially in 3-D mask effects.
Implementation Method 1
due to the diffraction, the actual layout 13 on the wafer is not the same as layout 11 on the photomask
Data Source
AI summary
A method for compensating an effect of a patterning process is illustrated. The main concept of the method for compensating the effect of the patterning process is to add or subtract the correction amounts for all segments according to the set of the comparison values at the set of the evaluation points. Compared with the delta-chrome optical proximity correction method, the run time of the method for compensating the effect of the patterning process is reduced, the memory usage of the method for compensating the effect of the patterning process not increased, and the correction accuracy of the method for compensating the effect of the patterning process is not reduced.