Non-Destructive Semiconductor Defect Detection With Thermal Contrast

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Solution Overview

Problem

Current methods for detecting semiconductor defects require destroying the semiconductor to inspect for defects, which is undesirable.

Innovation Solution

A method using temperature difference contrast to detect defects by applying a heat source to a semiconductor surface, allowing heat diffusion and capturing temperature images without damaging the semiconductor.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If a scanning electron microscope is used to check bonding accuracy by slicing the semiconductor, then defect detection precision is improved, but the semiconductor is destroyed

Engineering Contradiction:
Improvedefect detection precisionVSAvoidsemiconductor destruction
Core Design Contradiction:
Measurement precisionVSObject-affected harmful factors

Solution Approach 1:

The patent replaces the mechanical slicing method with a thermal imaging method. Instead of physically cutting the semiconductor to inspect internal structures, the invention uses infrared thermal imaging to detect temperature differences caused by defects, thereby eliminating mechanical destruction while maintaining detection capability

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent changes the detection parameter from physical structure (requiring slicing) to thermal parameter (temperature distribution). By applying heat to the semiconductor surface and measuring temperature differences through thermal imaging, the method detects defects without mechanical intervention

Inventive Principle:
Principle #35Parameter changes

2Measurement precision

If the semiconductor is sliced for inspection, then defect detection capability is improved, but productivity is worsened due to loss of tested samples

Engineering Contradiction:
Improvedefect detection capabilityVSAvoidproductivity
Core Design Contradiction:
Measurement precisionVSProductivity

Solution Approach 1:

The patent replaces destructive mechanical slicing with non-destructive thermal imaging, allowing the same semiconductor component to be inspected without being destroyed, thereby maintaining productivity while achieving defect detection

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent creates a thermal image copy of the semiconductor's internal structure and defect characteristics without physically altering the original. This thermal representation allows complete inspection while preserving the actual semiconductor for further use

Inventive Principle:
Principle #26Copying

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables defect detection in semiconductors without destruction, identifying issues such as conductive wire breaks, misalignments, and material defects through temperature contrast analysis.

Implementation Method 1

the heat source stopping heating part or all of the first surface of the target semiconductor, and part or all of the first surface of the target semiconductor completely diffusing heat in a direction towards part or all of a second surface of the target semiconductor

Methodology Applied
Scientific EffectHeat diffusion: Conduction (thermal)

Implementation Method 2

a thermal imager sensing temperatures of part or all of the first surface of the target semiconductor or temperatures of part or all of the second surface to obtain an image

Methodology Applied
Scientific EffectThermal radiation: Thermal Radiation

Data Source

PatentUS20250285260A1Method for detecting semiconductor defect using temperature difference contrast
Publication Date: 2025.09.11 SAULTECH TECH CO LTD
  • US20250285260A1 patent drawing
  • US20250285260A1 patent drawing
  • US20250285260A1 patent drawing

AI summary

A method for detecting semiconductor defect using temperature difference contrast is provided, including the following steps: obtaining an image of the first surface or a second surface of a standard semiconductor; heating part or all of a first surface of a target semiconductor by a heat source; stopping heating part or all of the first surface of the target semiconductor by the heat source; obtaining an image of the first surface or a second surface of the target semiconductor by a thermal imager; and comparing the first surface or the second surface of the standard semiconductor and the first surface or the second surface of the target semiconductor by a detecting unit to determine if the target semiconductor having defects or not. As such, the method can detect the target semiconductor having defects or not with temperature difference contrast under a condition of no damaging the target semiconductor.