Non-Metallic Mask Patterns for Semiconductor Etching
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Solution Overview
Problem
As semiconductor devices become increasingly integrated with smaller pattern sizes, achieving high operating speeds and reliability is hindered by the difficulty in manufacturing techniques, particularly in forming precise patterns without damaging adjacent metal structures during the etching process.
Innovation Solution
A method involving the use of non-metallic mask patterns with specific spacings and orientations is employed to etch semiconductor devices, allowing for the formation of precise patterns on a lower target layer without using metal-containing materials that could damage adjacent structures, such as gate electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If metal-containing mask materials are used for etching, then etching efficiency is improved, but adjacent metal structures such as gate electrodes are damaged
Solution Approach 1:
The mask pattern is segmented into multiple layers with different material compositions. The first mask layer contains metal materials for efficient etching, while the second mask layer contains non-metal materials that protect adjacent metal structures. This segmentation allows each layer to perform its specific function without causing harm to other components.
Solution Approach 2:
The non-metallic second mask layer acts as an intermediary protective layer between the metallic first mask layer and the adjacent metal structures (gate electrodes). This intermediary prevents direct contact and potential damage between the etching materials and sensitive metal components.
2Area of moving object
If pattern size is decreased to increase integration density, then device miniaturization is achieved, but manufacturing precision and reliability deteriorate
Solution Approach 1:
The mask pattern uses composite materials consisting of both metallic and non-metallic layers. The metallic layer provides etching efficiency while the non-metallic layer provides protection and structural stability. This composite structure enables precise pattern formation at smaller dimensions by combining the advantages of different material types.
Solution Approach 2:
The solution moves from a single-layer mask to a multi-layer mask structure, adding the vertical dimension to the mask design. This dimensional change allows for complex functional integration within the mask, enabling precise control of small patterns through the combined effects of different layers.
3Device complexity
If single-layer mask patterns are used, then manufacturing process is simplified, but pattern precision and protection capability are insufficient
Solution Approach 1:
The mask is divided into functional segments: a first mask layer for etching and a second mask layer for protection. Each segment serves a specific purpose, allowing the overall system to achieve high precision while maintaining reasonable process complexity through modular design.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the creation of semiconductor devices with improved pattern precision and reliability by avoiding damage to metal structures during the etching process, enhancing the manufacturing efficiency and effectiveness of semiconductor devices like SRAM.
Implementation Method 1
etching the first hard mask layer using the hard mask pattern to remove portions of the inorganic mask layer exposed by the hard mask pattern to expose the organic mask layer
Data Source
AI summary
A method of forming a semiconductor device can be provided by forming a mask pattern including non-metallic first spaced-apart portions that extend in a first direction on a lower target layer and non-metallic second spaced-apart portions that extend in a second direction on the lower target layer to cross-over the non-metallic first spaced-apart portions at locations. The lower target layer can be etched using the mask pattern.