Non-Planar Through-Contact Structures for Semiconductor Devices
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Solution Overview
Problem
As semiconductor devices shrink in size, contact resistance between materials increases, leading to reliability issues and difficulty in metal deposition due to high aspect ratios and void formation in FinFET structures, which conventional technologies struggle to control effectively.
Innovation Solution
The introduction of non-planar structures and additional material layers, including a through-contact material with a sloping profile and silicide material, reduces contact resistance by increasing surface area and lowering aspect ratios, facilitating improved metal fill and reducing void formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional planar contact structures are used in shrinking semiconductor devices, then device scaling is achieved, but contact resistance increases and reliability deteriorates
Solution Approach 1:
The patent transitions from conventional planar (2D) contact interfaces to three-dimensional non-planar contact structures with sloping profiles. The through-contact material forms interfaces that extend in multiple dimensions, increasing the effective contact area between materials while accommodating device scaling requirements
Solution Approach 2:
The through-contact material is formed with sloping profiles and curved interfaces rather than sharp planar boundaries. The non-planar interface geometry provides gradual transitions between materials, increasing surface area for contact and improving electrical transmission while maintaining compatibility with scaled device dimensions
2Productivity
If device structures are shrunk to smaller sizes, then higher integration density is achieved, but contact resistance increases
Solution Approach 1:
By creating three-dimensional non-planar contact interfaces with sloping profiles, the patent increases the effective contact area without increasing the planar footprint. This allows higher integration density while maintaining low contact resistance through enhanced vertical and lateral contact pathways
3Adaptability or versatility
If conventional metal deposition is performed on high aspect ratio structures, then device miniaturization is achieved, but void formation occurs and metal fill becomes difficult
Solution Approach 1:
The through-contact material with sloping profile is formed before metal deposition to create optimized geometry for subsequent processing. The non-planar interface structure is prepared in advance to facilitate uniform metal fill and prevent void formation during deposition
Solution Approach 2:
The sloping profiles and curved interfaces of the through-contact material provide gradual geometric transitions that eliminate sharp corners and high aspect ratio features. This curved geometry enables uniform metal deposition without void formation, making manufacturing easier while maintaining miniaturized device dimensions
4Ease of manufacture
If planar contact interfaces are used, then manufacturing simplicity is maintained, but contact resistance increases due to limited surface area
Solution Approach 1:
The patent extends the contact interface from two-dimensional planar geometry into the third dimension with sloping profiles and non-planar surfaces. This dimensional transition increases contact surface area and improves electrical transmission while remaining compatible with existing semiconductor manufacturing processes
Data Source
AI summary
Semiconductor structures may include a substrate. The structures may include a gate structure overlying the substrate and formed in a first direction across the substrate. The structures may include a fin overlying the substrate and formed in a second direction across the substrate. The second direction may be orthogonal to the first direction, and the fin may intersect the gate structure. The structures may include a source/drain material formed about the fin. The structures may include a through-contact material extending vertically above the source/drain material. The structures may include a metal material extending vertically above the through-contact material. An interface between the metal material and the through-contact material may be characterized by a non-planar profile.