Non-Volatile Flip Flop with Resistive Memory Cells
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Solution Overview
Problem
Current flip flop circuits require auxiliary power to retain data, which is inefficient and not practical for varying process, voltage, and temperature conditions, necessitating a non-volatile solution.
Innovation Solution
The implementation of resistive non-volatile memory cells with programmable resistive elements allows for differential writing and reading, enabling ultra-low power retention of flip flop data using an array configuration with sense amplifiers and error correction capabilities, allowing parallel operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If auxiliary backup voltage is supplied to retain flip flop data, then data retention is achieved, but power consumption increases
Solution Approach 1:
The patent extracts the data retention function from the volatile flip flop circuitry and places it in separate non-volatile memory cells. The flip flop circuitry no longer needs auxiliary backup voltage because the non-volatile memory cells independently retain data without power, thus eliminating the power consumption associated with data retention while maintaining reliability.
Solution Approach 2:
The patent replaces the electrical mechanism (auxiliary backup voltage) with a different physical mechanism (resistive memory cells that retain state without power). The non-volatile memory cells use resistive elements that maintain their resistance state without requiring continuous electrical power, substituting the power-dependent electrical retention mechanism with a power-independent resistive mechanism.
2Use of energy by moving object
If non-volatile memory cells are used for data retention, then power consumption decreases, but manufacturing complexity increases
Solution Approach 1:
The patent segments the memory system into distinct functional components: volatile flip flop circuitry for rapid access operations and non-volatile memory cells for data retention. This segmentation allows each component to be optimized independently - the flip flops for speed and the non-volatile cells for power efficiency - while simplifying the overall manufacturing by using standard cell structures for each segment.
Solution Approach 2:
The non-volatile memory cells serve multiple functions: they act as both storage elements and backup memory, eliminating the need for separate backup circuitry. The resistive memory cell structure is designed to be universally applicable across different process nodes and can be integrated with various flip flop configurations, enhancing manufacturing flexibility and practicality.
3Use of energy by moving object
If resistive memory cells are used, then power consumption is reduced, but data accuracy under process variations deteriorates
Solution Approach 1:
The patent implements sense amplifiers that read the resistance state of the memory cells and provide feedback to ensure accurate data retrieval. The sense amplifiers compensate for process variations by amplifying the differential signal from the resistive memory cells, ensuring that data accuracy is maintained despite manufacturing tolerances and process variations.
Solution Approach 2:
The patent uses differential reading techniques where pairs of resistive memory cells are read simultaneously with opposite polarities. By changing the reading parameters (applying opposite voltages to differential cell pairs) and comparing the results, the system compensates for process variations and achieves accurate data retrieval despite manufacturing tolerances in the resistive elements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution provides efficient and accurate data retention with minimal power consumption, independent of the number of cells, and supports multiple banks of flip flop circuits with error correction, ensuring reliable operation under varying conditions.
Implementation Method 1
Resistive non-volatile memory is used to provide non-volatile flip flop circuitry. Each non-volatile memory cell includes two programmable resistive elements
Implementation Method 2
Data can be read and written in parallel. Read and write time is thus independent of the number of cells being read or written. Sense amplifiers are coupled to each bit line
Data Source
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AI summary
An integrated circuit includes a first plurality of flip flops; a first bank of resistive memory cells, wherein each flip flop of the first plurality of flip flops uniquely corresponds to a resistive memory cell of the first bank of resistive memory cells; write circuitry configured to store data from the first plurality of flip flops to the first bank of resistive memory cells; and read circuitry configured to read data from the first bank of resistive memory cells and provide the data from the first bank for storage into the first plurality of flip flops.