Non-Active Gate Support Structure for High-Aspect-Ratio FinFETs
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Solution Overview
Problem
The increasing aspect ratio of gate structures in fin-based transistors leads to reduced stability, causing peeling and collapse, particularly in non-active gate structures, which can result in defects and reduced density of gate structures in semiconductor devices.
Innovation Solution
A non-active gate structure with a support structure extending orthogonally from the gate is formed over a shallow trench isolation region adjacent to fin structures, providing structural support and increasing stability, allowing for higher aspect ratios without increased peeling risk.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the aspect ratio of gate structures is increased to achieve higher density, then the density of gate structures is improved, but the stability of the gate structures deteriorates, causing peeling and collapse
Solution Approach 1:
The gate structure is divided into multiple segments along its length, with support structures positioned at intervals to provide localized reinforcement. This segmentation allows each section to maintain stability independently while contributing to the overall high-density configuration.
Solution Approach 2:
Support structures are added in a direction orthogonal to the main gate structure, transitioning from a two-dimensional planar configuration to a three-dimensional structure. This dimensional addition provides structural reinforcement without increasing the footprint area, enabling higher density while maintaining stability.
2Productivity
If the aspect ratio of gate structures is increased to achieve higher density, then the density of gate structures is improved, but the manufacturing precision deteriorates due to peeling and collapse
Solution Approach 1:
Support structures are incorporated into the gate structure design before the fabrication process begins. These preliminary structural reinforcements are formed simultaneously with the gate structure through coordinated deposition and patterning steps, preventing peeling and collapse during subsequent manufacturing operations.
Solution Approach 2:
The gate structure employs composite material layers with different mechanical properties, combining materials that provide both electrical functionality and structural strength. The support structures use materials with higher mechanical strength to reinforce the gate structure during fabrication while maintaining the desired electrical characteristics.
Data Source
AI summary
A non-active gate structure is formed over a shallow trench isolation (STI) region that is adjacent to at least one fin structure of a semiconductor device that includes a fin-based transistor. The non-active gate structure includes at least one support structure that extends from the gate in a direction that is approximately orthogonal to the direction in which the main body of the non-active gate structure extends. The support structure provides structural support for the non-active gate structure, which increases the stability of the non-active gate structure relative to a gate structure that does not include the support structure.