Non-linear finFETs with bent backbone for short channel control
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Solution Overview
Problem
Current finFET technologies face challenges in efficiently managing short channel effects and achieving versatile transistor designs, particularly in creating multi-terminal devices with precise control over channel dimensions and configurations for advanced communication systems like MIMO.
Innovation Solution
The development of non-linear fin-based finFETs with a self-aligned spacer process and bent backbone architecture allows for the creation of multi-terminal transistors with varied fin shapes, enabling efficient short channel control and integration of linear and non-linear finFETs on the same substrate for enhanced performance in mixers, amplifiers, and multiplexors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional planar finFET structures are used, then manufacturing simplicity is maintained, but short channel control is insufficient
Solution Approach 1:
The patent applies curvature by transitioning from planar fin structures to bent backbone fin structures. The non-linear fin configuration with curved backbone provides enhanced gate control over the channel region, improving short channel effects while maintaining manufacturing feasibility through self-aligned spacer processes.
2Adaptability or versatility
If multi-terminal devices are designed for advanced communication systems, then communication performance is enhanced, but device design complexity increases
Solution Approach 1:
The patent segments the fin structure into multiple terminals (source, drain, and intermediate terminals) along the bent backbone. This segmentation enables multi-terminal functionality for advanced communication systems like MIMO while using a systematic design approach that manages complexity through modular terminal configuration.
Solution Approach 2:
The bent backbone fin structure serves multiple functions: it provides enhanced short channel control, enables multi-terminal configurations, and supports various communication system requirements. This universal structure can be adapted for different terminal configurations and application requirements.
3Manufacturing precision
If precise control over channel dimensions is achieved, then transistor performance is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent uses preliminary patterning of the bent backbone structure before fin formation. This preliminary action establishes the non-linear fin configuration early in the manufacturing process, enabling precise channel dimension control through self-aligned spacer formation that propagates the bent geometry to define accurate channel dimensions.
Data Source
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AI summary
An embodiment includes an apparatus comprising: a non-planar fin having first, second, and third portions each having major and minor axes and each being monolithic with each other; wherein (a) the major axes of the first, second, and third portions are parallel with each other, (b) the major axes of the first and second portions are non-collinear with each other, (c) each of the first, second, and third portions include a node of a transistor selected from the group comprising source, drain, and channel, (e) the first, second, and third portions comprise at least one finFET. Other embodiments are described herein.