Non-Linear Gate Separation Layout for Dense Semiconductor Integration
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Solution Overview
Problem
Existing semiconductor devices face challenges in achieving high integration and low cost while maintaining effective separation and functionality of gate electrodes and active patterns.
Innovation Solution
A semiconductor device design featuring non-linear gate separation structures and element separation structures that vary in distance from active patterns, allowing for efficient separation and alignment of gate electrodes, enhancing integration and functionality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional linear gate separation structures are used, then manufacturing is simpler, but integration density and device performance are limited
Solution Approach 1:
The gate separation structure employs a non-linear curved configuration instead of a straight line, allowing the structure to optimize spacing between gate electrodes and active patterns. This curvature enables better spatial arrangement that increases integration density while maintaining manufacturability through standard lithographic processes.
Solution Approach 2:
The gate separation structure has varying distances from different portions to the active patterns, creating local variations in spacing. This allows optimized electrical isolation and capacitance control in different regions, improving device performance without requiring completely new manufacturing approaches.
2Area of stationary object
If gate separation structures are positioned closer to active patterns, then integration is improved, but electrical isolation and signal interference control become more difficult
Solution Approach 1:
The curved configuration of the gate separation structure allows it to navigate around active patterns at optimized distances. By curving away from certain regions and approaching others, the structure achieves compact area utilization while maintaining adequate electrical isolation where needed and reducing parasitic capacitance in critical regions.
Solution Approach 2:
The gate separation structure implements variable spacing parameters, with different distances from various portions to the active patterns. This parameter variation allows the structure to adapt locally to electrical isolation requirements while maximizing overall integration density across the device area.
Data Source
AI summary
A semiconductor device including a substrate; first and second active patterns on the substrate, extending in a first direction and spaced apart in a second direction; gate electrodes on the first and second active patterns and extending in the second direction; a first gate separation structure between the first and second active patterns, extending in the first direction, and separating the gate electrodes; and a first element separation structure between the gate electrodes, extending in the second direction, and separating the second active pattern, wherein a distance to a first side of a first portion of the first gate separation structure is smaller than a distance to the first side of a second portion of the first gate separation structure, and a distance to the second side of the first portion is smaller than a distance from the second active pattern to the second side of the second portion.