Nonlinear Gate Separation Structure for Dense Semiconductor Layouts
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Solution Overview
Problem
Existing semiconductor devices face challenges in achieving high integration and low cost while maintaining effective separation and functionality of gate electrodes and active patterns.
Innovation Solution
The semiconductor device incorporates a substrate with active patterns and gate electrodes separated by gate and element separation structures, where the gate separation structures have varying distances from the active patterns to ensure optimal spacing and overlap, enhancing the separation and functionality of the active patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If gate separation structures are used to separate gate electrodes, then gate electrode separation is improved, but device complexity increases
Solution Approach 1:
The gate separation structure is divided into multiple segments along the first direction, with each segment positioned at different distances from the active pattern. This segmentation allows the structure to provide effective gate electrode separation while maintaining a manageable and fabricatable design.
Solution Approach 2:
Different segments of the gate separation structure have different distances from the active pattern, creating local variations in the electric field distribution. This local quality approach optimizes the separation effect at different positions without requiring a completely complex overall structure.
2Reliability
If multiple separation structures are implemented, then separation effectiveness is improved, but manufacturing precision requirements increase
Solution Approach 1:
The gate separation structure utilizes variations in distance (a geometric parameter) from the active pattern to optimize separation effectiveness. By changing this parameter across different segments, the structure achieves improved separation while the variations can be controlled within standard manufacturing tolerances.
3Adaptability or versatility
If gate separation structures with varying distances are used, then functionality is optimized, but device complexity increases
Solution Approach 1:
The gate separation structure employs asymmetric positioning of its segments relative to the active pattern, with different distances from the active pattern at different locations. This asymmetry optimizes the electric field distribution and separation functionality without requiring overly complex structural arrangements.
Data Source
AI summary
A method of fabricating a semiconductor device, including forming first and second active patterns on a substrate, in which the first and second active patterns are spaced apart, forming gate electrodes on the first and second active patterns, in which the gate electrodes are spaced apart, and forming a non-linear gate separation structure between the first and second active patterns, including a first side facing the second active pattern, and a second side opposite to the first side, a distance from the second active pattern to the first side of a first portion of the non-linear gate separation structure is smaller than a distance to the first side of a second portion of the non-linear gate separation structure, and a distance from the second active pattern to the second side of the first portion is smaller than a distance to the second side of the second portion.