Nonperiodic Lithography Mask for 1 Nm Matter-Wave Patterning
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Solution Overview
Problem
Current photolithography techniques, including EUV and grid-based binary holography, are limited in generating patterns with feature sizes below 6 nm, which hinders the production of quantum devices and requires complex multiple exposures, unsuitable for mass production.
Innovation Solution
A lithography pattern generation system using metastable atoms and a mask with non-uniformly sized and shaped holes, leveraging dispersion forces to control phase shifts and amplitude modulation, allows for single-copy pattern generation with feature sizes down to 1 nm or less.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If EUV photolithography with 13.5 nm wavelength is used, then pattern generation capability is improved, but secondary electron blur limits feature size to around 6 nm
Solution Approach 1:
The patent replaces photolithography (electromagnetic wave-based) with matter-wave lithography using metastable atoms. This substitution eliminates the secondary electron blur mechanism that plagues EUV photolithography, as atoms interact with the resist through direct physical interaction rather than photo-generated electrons. The de Broglie wavelength of metastable atoms provides the necessary resolution while avoiding the harmful secondary electron effect.
Solution Approach 2:
The patent changes the fundamental parameter of the lithographic beam from photons to metastable atoms. By using atoms with specific quantum states (metastable states), the interaction mechanism with the resist changes fundamentally, eliminating the secondary electron production that causes blur. The de Broglie wavelength of the atoms serves as the effective wavelength for pattern formation.
2Manufacturing precision
If multiple exposures are used to achieve smaller pitch, then manufacturing precision is improved, but productivity decreases and complexity increases
Solution Approach 1:
The patent uses a mask with multiple through-holes of different sizes and shapes that simultaneously generate multiple diffraction orders. Each diffraction order contributes to forming the final pattern, allowing complex patterns with small pitch to be created in a single exposure rather than requiring multiple sequential exposures.
Solution Approach 2:
The patent exploits the diffraction angle dimension to encode multiple pattern information. By designing through-holes with specific size distributions, different diffraction orders (angular dimensions) carry different pattern information that combines to form the final high-resolution pattern in a single exposure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables fast and efficient production of small features over large write fields with improved contrast and reduced background signal, suitable for mass production of quantum devices.
Implementation Method 1
the mask is configured to modulate an amplitude of the particle wavefront as it propagates through the mask
Implementation Method 2
leveraging dispersion forces to control phase shifts
Data Source
Figure 1~2
Figure 3~4
Figure 5.1~5.6
AI summary
A lithography pattern generation system (1) and method comprising - an incoming particle beam (21) with a most probable wavelength (λ) from a particle source (2) and - a mask (4) comprising through holes (3) arranged in the incoming particle beam (21). The lithography pattern generation system (1) generates a single nanometre feature size pattern (51) and wherein the through holes (3) are arranged non-periodically in the mask. A computer implemented method for generating a lithography mask (4) model is also disclosed.