Non-Planar Film Deposition With Cyclic Etch for Thickness Uniformity

The patent applies periodic action by implementing cyclic deposition-etching sequences. The deposition process is divided into multiple cycles where material is deposited and then partially removed through etching, gradually building uniform thickness. This periodic approach transforms a single complex deposition into manageable iterative steps, achieving uniform film thickness on high aspect ratio structures while controlling the process complexity through systematic repetition.

The patent utilizes parameter changes by varying deposition and etching conditions across different cycles. By adjusting deposition thickness, etching duration, and process parameters in each cycle, the method adapts to achieve uniform film formation. The parameters are dynamically modified based on the evolving film structure, allowing precise control over final film uniformity while managing process complexity through parameter optimization.

The cyclic deposition-etching process uses periodic action to prevent defect formation. By repeatedly depositing and selectively removing material, the process ensures complete trench filling without overhang formation. This iterative approach maintains high element reliability by eliminating voids and ensuring uniform coverage, while the systematic cycle structure keeps the process efficient and manageable.

The patent applies the extraction principle by selectively removing excess material through etching steps. After each deposition cycle, the etching process extracts material from overhanging regions and uneven surfaces, preventing defect formation. This selective removal ensures that only the desired uniform film remains, significantly improving element reliability by eliminating overhangs and voids that would otherwise compromise structure integrity.

The cyclic deposition-etching method uses periodic action to address thickness deviation on non-planar surfaces. Each cycle deposits material to achieve coverage, then selectively removes excess from elevated regions through etching. This repeated cycle gradually equalizes thickness across the non-planar surface while maintaining complete area coverage, transforming the challenge of surface irregularity into a controlled iterative process.

The patent applies parameter changes by adjusting deposition and etching conditions to accommodate non-planar surfaces. By modifying process parameters such as deposition rate, etching selectivity, and cycle duration, the method adapts to the specific surface topology. These parameter adjustments ensure uniform thickness achievement while maintaining complete surface coverage, resolving the contradiction between coverage and uniformity.