Non-Volatile C-Element Circuit Using Resistive Backup Memory

The patent merges the volatile storage function (latch) and non-volatile storage function (resistive memory) into a single integrated C-element structure. The resistive elements are coupled directly to the storage nodes of the latch through transistors, creating a unified circuit that performs both volatile and non-volatile storage without requiring separate independent memory blocks, thereby improving data retention while limiting complexity increase.

The resistive memory elements serve multiple functions: they act as non-volatile storage during power cycles, provide data backup during operation, and enable state restoration. The same resistive elements and associated transistors are used for both data retention and data restoration functions, reducing the need for additional dedicated components and mitigating complexity increases.

The patent implements periodic backup operations where data is transferred from the volatile latch to the non-volatile resistive memory at specific intervals or under certain conditions (e.g., before power down). This periodic action allows the system to maintain data retention capability while avoiding continuous energy consumption associated with constant data writing to non-volatile memory, thus balancing reliability improvement with energy consumption management.

The C-element circuit uses its own internal transistors and existing signal paths to perform the data backup operation to the resistive memory, rather than requiring external control logic or additional dedicated write circuits. The existing inverter and latch transistors are repurposed for the backup function, eliminating the need for separate energy-consuming control infrastructure and reducing overall energy consumption.