Nonvolatile Memory Bad Block Voltage Control
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Solution Overview
Problem
Existing nonvolatile memory devices with a multi-plane structure face performance issues when a bad block is present, as simultaneous operations across multiple planes can lead to increased voltage requirements and potential threshold voltage variations, affecting reliability.
Innovation Solution
A nonvolatile memory device and operating method that dynamically adjust operating voltages based on the presence of bad blocks, switching between single and multi-operation modes to optimize performance and reliability by using a control unit to generate appropriate control signals for the address decoder, voltage generator, and page buffer circuit.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multi-operation mode is used to improve performance, then productivity increases, but reliability deteriorates when bad blocks are present due to voltage variations
Solution Approach 1:
The system dynamically switches between multi-operation mode (for high performance when no bad blocks present) and single-operation mode (for reliability when bad blocks detected). The control unit monitors bad block status and adjusts the operation mode accordingly, making the system adaptive to different operational conditions rather than fixed in one mode.
Solution Approach 2:
The invention changes the operational parameters (voltage levels, operation timing) based on the presence of bad blocks. When bad blocks are detected, the system modifies voltage application patterns to prevent threshold voltage variations, thereby maintaining reliability while still utilizing multi-plane architecture.
2Speed
If simultaneous operations on multiple planes are performed, then speed increases, but device complexity increases due to voltage management requirements
Solution Approach 1:
The control unit acts as an intermediary that manages the complexity of voltage control for multi-plane operations. It coordinates voltage generation and timing across multiple planes, abstracting the complexity from the rest of the system while enabling fast simultaneous operations when conditions permit.
3Productivity
If operating voltage is increased to maintain performance with bad blocks, then productivity is maintained, but threshold voltage consistency deteriorates
Solution Approach 1:
The system dynamically adjusts voltage levels based on operational context. When operating in single-operation mode due to bad blocks, it uses optimized voltage patterns that maintain productivity while ensuring threshold voltage consistency. When in multi-operation mode with no bad blocks, it can use higher voltages for maximum performance.
Data Source
AI summary
A nonvolatile memory device and an operating method are provided. The nonvolatile memory device includes a memory cell array including a plurality of planes, each plane including a plurality of memory blocks, an address decoder connected to the memory cell array, a voltage generator configured to apply an operating voltage to the address decoder, a page buffer circuit including page buffers corresponding to each of the planes, a data input/output circuit connected to the page buffer circuit configured to input and output data and a control unit configured to control the operation of the address decoder, the voltage generator, the page buffer circuit, and the data input/output circuit, wherein the control unit is configured to operate in a multi-operation or a single operation by checking whether a memory block of an access address is a bad block.