Non-Volatile Memory Block Segmentation for Data Update
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Solution Overview
Problem
Semiconductor integrated circuits with small capacity non-volatile memory face increased costs when using electrically rewritable flash memory for data updates, while non-rewritable memories cannot be updated or reused once data is stored.
Innovation Solution
A semiconductor integrated circuit with multiple non-volatile memory blocks, each with a flag memory system to indicate whether data is written, allowing for block selection and reuse by switching between blocks, eliminating the need for dedicated registers and reducing circuit size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If electrically rewritable flash memory is used to enable data updates, then data update capability is improved, but manufacturing cost increases
Solution Approach 1:
The non-volatile memory is divided into multiple blocks (first block, second block, etc.), each capable of storing data once. By segmenting the memory into reusable blocks with associated flag memories, the system enables data updates without requiring fully rewritable flash memory, thus reducing manufacturing cost while maintaining update capability.
Solution Approach 2:
Once a block's data is written, it is discarded for future updates. The system recovers unused blocks by selecting them via the block selection circuit based on flag states. This allows continuous reuse of non-volatile memory blocks without needing expensive rewritable memory.
2Ease of manufacture
If non-rewritable non-volatile memory is used to reduce cost, then manufacturing cost decreases, but data update capability is lost
Solution Approach 1:
The memory is segmented into multiple blocks with associated flag memories. This segmentation transforms single-use non-rewritable memory into a multi-use system by providing alternative blocks for each update cycle.
Solution Approach 2:
Flag memories and a block selection circuit are introduced as intermediary components. These intermediaries manage block selection and tracking, enabling the non-rewritable memory blocks to be effectively reused without requiring the blocks themselves to be rewritable.
3Adaptability or versatility
If multiple memory blocks with flag management are implemented, then data reuse capability is improved, but circuit complexity increases
Solution Approach 1:
The flag memory for each block is merged with the corresponding non-volatile memory block, and the block selection circuit consolidates flag reading and block selection functions. This merging reduces overall circuit complexity compared to having separate management systems.
Solution Approach 2:
Each memory block includes its own flag memory that automatically tracks its written state. The block selection circuit automatically selects unused blocks based on flag states, eliminating the need for external management registers or complex control logic.
Data Source
AI summary
In the semiconductor integrated circuit incorporating non-volatile memory that is not electrically rewritable, updating stored data and reusing the non-volatile memory are made possible. The data stored in the non-volatile memory can be updated and the non-volatile memory can be reused by dividing the non-volatile memory into a plurality of blocks and replacing a used block with an unused block. When data “1” is set in the first flag of a certain block, a block selection circuit judges that data is already written in the block and rewriting new data into the block is not possible. To update the stored data, the updated data is written into a block that is selected by the block selection circuit out of the rest of the blocks. At that time, the first flag of the block is set to data “1”. Stored data is updated one after another as described above. When data of final update is written into a certain block, the second flag of the block is set to data “1”.