Nonvolatile Memory Device Circuit Size Reduction
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing nonvolatile memory devices using hot carrier injection require large circuit sizes due to the need for switches to handle high drain currents during programming operations, leading to increased complexity and size.
Innovation Solution
A nonvolatile memory device configuration that includes a differential amplifier, drive transistor, current mirrors, and switches to control gate-source voltage and drain voltage, allowing for efficient programming and reading of data with reduced circuit size by using a switch to apply high voltage to the drain during programming and controlling the gate-source voltage during reading.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If switches are used to handle high drain currents during programming operations, then programming capability is achieved, but circuit size increases
Solution Approach 1:
The patent extracts the high voltage generation function from the main circuit path by using a separate charge pump circuit. This allows the main switching transistors to operate at lower voltages during normal operations, reducing their size requirements, while still enabling high voltage programming through the separate charge pump path.
Solution Approach 2:
The patent introduces a charge pump circuit as an intermediary component that generates the high voltage needed for programming operations. This mediator handles the high voltage generation separately, allowing the main data storage circuit to remain compact while still achieving programming capability through the intermediary's assistance.
2Ease of manufacture
If high voltage is applied to drain during programming, then hot carrier injection is enabled, but device complexity increases
Solution Approach 1:
The patent segments the voltage control into distinct phases and circuits: a charge pump circuit for high voltage generation during programming, and standard voltage control for reading operations. This segmentation allows hot carrier injection capability to be achieved without requiring the entire device to handle high voltage complexity continuously.
Solution Approach 2:
The patent employs periodic switching between programming mode (with high voltage from charge pump) and read mode (with standard voltages). This periodic action allows hot carrier injection to occur only when needed during programming cycles, while maintaining simpler operational characteristics during read cycles, thereby reducing overall device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables efficient data storage and reading with reduced circuit size, improving the storage capacity and operational efficiency of the nonvolatile memory device.
Implementation Method 1
a memory element (82) configured to perform program operation by trapping charges to a sidewall
Implementation Method 2
A nonvolatile memory device using injection of hot carriers into a transistor has been used
Data Source
AI summary
A nonvolatile memory device includes a memory element configured to perform program operation by trapping charges to a sidewall, and a switch configured to widen a drain-source voltage of the memory element during the program operation, with polarity same as polarity during read operation.