Nonvolatile Memory Compare-and-Write Power Reduction

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Solution Overview

Problem

Nonvolatile memory devices face challenges in reducing power consumption during overwrite operations while maintaining data integrity, as existing technologies either consume significant power or compromise data integrity.

Innovation Solution

A nonvolatile memory device and memory system that perform a compare and write operation by inverting data, adding flag bits, and performing reinforcement operations to select candidate data with lower differences, thereby reducing the number of set or reset operations required, thus minimizing power consumption and enhancing data integrity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If an overwrite operation is performed in a nonvolatile memory device, then data can be updated, but power consumption increases significantly

Engineering Contradiction:
Improveoverwrite capabilityVSAvoidpower consumption
Core Design Contradiction:
Adaptability or versatilityVSUse of energy by moving object

Solution Approach 1:

The patent applies partial action by performing write operations only on memory cells where data actually changes. The controller compares existing data with new data, identifies only the differing bits, and performs set or reset operations exclusively on those specific memory cells rather than rewriting entire blocks, thereby reducing power consumption while maintaining overwrite capability

Inventive Principle:
Principle #16Partial or excessive action

Solution Approach 2:

The patent changes the operational parameters of the memory device by implementing dual-mode operation (set operation mode and reset operation mode) with different voltage levels. By dynamically selecting which operation to perform based on data comparison results, the system optimizes power consumption while achieving the desired data update

Inventive Principle:
Principle #35Parameter changes

2Adaptability or versatility

If an overwrite operation is performed in a nonvolatile memory device, then data can be updated, but data integrity is reduced

Engineering Contradiction:
Improveoverwrite capabilityVSAvoiddata integrity
Core Design Contradiction:
Adaptability or versatilityVSReliability

Solution Approach 1:

The patent implements feedback mechanisms through data comparison before write operations. The controller reads existing data, compares it with new data, and uses this feedback information to determine which memory cells require modification. This feedback loop ensures that write operations are performed only when necessary and with proper verification, thereby maintaining data integrity while enabling overwriting

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The patent performs preliminary actions by conducting data comparison and generating write enable signals before actual write operations. The controller prepares the data, determines the appropriate operation type (set or reset), and generates control signals in advance, ensuring that write operations are executed correctly and data integrity is maintained

Inventive Principle:
Principle #10Preliminary action

3Use of energy by moving object

If a compare and write operation is performed with data inversion and reinforcement operations, then power consumption is reduced, but device complexity increases

Engineering Contradiction:
Improvepower consumptionVSAvoidoperation complexity
Core Design Contradiction:
Use of energy by moving objectVSDevice complexity

Solution Approach 1:

The patent merges multiple functions into the controller unit, which performs data comparison, inversion, reinforcement operation determination, and write control all in one integrated component. By combining these functions rather than distributing them across separate devices, the patent reduces overall system complexity while achieving power consumption reduction through the sophisticated operation sequence

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS12013754B2Nonvolatile memory device and memory system including nonvolatile memory device
Publication Date: 2024.06.18 SAMSUNG ELECTRONICS CO LTD
  • US12013754B2 patent drawing
  • US12013754B2 patent drawing
  • US12013754B2 patent drawing

AI summary

A nonvolatile memory device performs a compare and write operation. The compare and write operation includes reading read data from memory cells, inverting first write data to generate second write data, adding a first flag bit to the first write data to generate third write data and adding a second flag bit to the second write data to generate fourth write data, performing a reinforcement operation on each of the third write data and the fourth write data to generate fifth write data and sixth write data, and comparing the read data with each of the fifth write data and the sixth write data and writing one of the fifth and sixth write data in the memory cells based on a result of the comparison.