Nonvolatile Memory Control Circuit for Concurrent Command Execution
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Solution Overview
Problem
Conventional nonvolatile memory devices require sequential operation of voltage generation circuits for programming, reading, and erasing, limiting their efficiency as they cannot receive data or addresses until the voltage generation circuit is deactivated, leading to inefficient operation.
Innovation Solution
A nonvolatile memory device with a control circuit that independently activates, performs operations, and deactivates operation voltages, allowing for separate commands for voltage activation, operation execution, and voltage deactivation, enabling independent receipt and processing of addresses and data during these operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a conventional nonvolatile memory device sequentially activates a voltage generation circuit, programs memory cells, and then deactivates the voltage generation circuit, then the program operation is completed reliably, but the device cannot receive data or addresses until the voltage generation circuit is deactivated, leading to inefficient operation
Solution Approach 1:
The patent segments the command reception and execution process into distinct phases: a first command (e.g., program voltage activation command) initiates voltage generation circuit activation, while a second command (e.g., program command) is received and processed during the voltage activation period. This segmentation allows overlapping operations where data and addresses can be received while voltages are being activated, improving productivity without compromising operational reliability.
2Productivity
If the voltage generation circuit is activated before receiving all necessary data and addresses, then concurrent operations can be performed improving efficiency, but the sequential nature of conventional devices prevents this overlap
Solution Approach 1:
The patent implements preliminary action by activating the voltage generation circuit in advance with a first command before the actual program operation is initiated. During this voltage activation period, the device prepares to receive the second command (program command) along with associated data and addresses. This preliminary voltage activation enables concurrent operations and improves productivity while the command processing structure remains manageable through clear phase separation.
Data Source
AI summary
A nonvolatile memory device may include a nonvolatile memory device may include a nonvolatile memory cell array; a peripheral circuit suitable for: activating an operation voltage in response to an operation voltage activation command, performing an operation to the nonvolatile memory cell array using the activated operation voltage in response to an operation command, and deactivating the activated operation voltage in response to an operation voltage deactivation command after the performing of the operation; and a control circuit suitable for controlling the peripheral circuit to execute an intervening operation during the activating of the operation voltage, the performing of the operation, and the deactivating of the activated operation voltage.