Nonvolatile Memory Control Device Wear Leveling
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Solution Overview
Problem
Conventional nonvolatile memory devices level erase cycles across partitions to prolong service life, but existing methods may inadvertently shorten memory life by misidentifying data with high rewrite cycles, leading to uneven wear and tear.
Innovation Solution
A nonvolatile memory control device with an erase cycle counting unit, read cycle counting unit, and control unit that exchanges data between partitions with high and low erase cycles, prioritizing partitions with higher read cycles to evenly distribute write operations and prevent concentration of rewrite cycles.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If data exchange is performed based only on partition erase cycle counts, then erase cycle leveling is achieved, but data with high rewrite cycles may be misplaced and service life is shortened
Solution Approach 1:
The patent changes the decision parameters for data exchange from only erase cycle count to a combination of erase cycle count and read cycle count. By introducing read cycle count as an additional parameter, the system can identify partitions with high read activity and use this information to make more accurate data exchange decisions, thereby avoiding misplacement of data that would otherwise be incorrectly identified as having low rewrite cycles.
2Ease of operation
If conventional data exchange is performed, then erase cycle leveling is simplified, but data with large number of rewrite cycles may be stored in partitions with largest erase cycles
Solution Approach 1:
The patent implements a feedback mechanism by counting and utilizing read cycle information to improve data exchange decisions. The read cycle count serves as feedback that informs the control unit about actual data usage patterns, allowing the system to adjust its data exchange strategy accordingly. This feedback loop enables more precise data placement while maintaining operational simplicity through automated control.
Data Source
AI summary
A nonvolatile memory control device performs data reading/writing control on partitions of a rewritable nonvolatile semiconductor memory. The device includes an erase cycle counting unit, a read cycle counting unit, a data reading/writing unit and a control unit. The erase cycle counting unit counts the number of erase cycles in total per partition. The read cycle counting unit counts the number of read cycles that same data is read per partition. When the number of erase cycles of a first partition is equal to or larger than a predetermined number of erase cycles, and a second partition having a smaller number of erase cycles and a larger number of read cycles than the first partition is present, the control unit controls the data reading/writing unit to exchange data in the first partition and data in the second partition.