Nonvolatile Memory Damascene Structure Prevents Storage Layer Damage
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Solution Overview
Problem
Existing nonvolatile memory devices face challenges in preventing damage to the information storage layer and film peeling during the patterning process, and have complex manufacturing procedures due to the need for precise etching and multiple layer formations.
Innovation Solution
A nonvolatile memory device with a damascene structure is developed, featuring a first insulating layer, a second insulating layer with concavities, electrodes exposed from the bottom surface, and a conductive material layer filled in the concavities, which simplifies the manufacturing process and avoids layer patterning and peeling issues by forming the structure within the concavities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If precise etching and multiple layer formations are used to form the memory structure, then the device performance and reliability are improved, but the manufacturing complexity and difficulty increase
Solution Approach 1:
The patent forms the information storage layer on the side walls and bottom surfaces of the concavities before filling the conductive material, rather than requiring precise etching of the storage layer itself. This preliminary formation of the storage layer in the concavity regions eliminates the need for complex subsequent patterning steps while ensuring proper layer alignment and preventing peeling issues
Solution Approach 2:
The patent divides the structure into distinct regions with the second insulating layer forming concavities that separate individual memory device regions. This segmentation allows the information storage layer to be formed on the side walls and bottom surfaces of each concavity independently, simplifying the overall manufacturing process while maintaining device performance
2Manufacturing precision
If the information storage layer is patterned by etching to form the memory structure, then the device structure precision is improved, but the information storage layer is damaged
Solution Approach 1:
Instead of patterning the information storage layer by etching it directly, the patent inverts the approach by forming the storage layer on the side walls and bottom surfaces of pre-formed concavities, then filling the remaining space with conductive material. This inversion eliminates direct etching of the storage layer while achieving the same structural precision
Solution Approach 2:
The patent introduces the second insulating layer with concavities as an intermediary structure that guides the formation of the information storage layer. The concavities serve as templates that define the precise location and shape of the storage layer without requiring direct etching of the storage layer itself, thus preventing damage while achieving structural precision
Data Source
AI summary
A nonvolatile memory device group includes: (A) a first insulating layer; (B) a second insulating layer that has a first concavity and a second concavity communicating with the first concavity and having a width larger than that of the first concavity and that is disposed on the first insulating layer; (C) a plurality of electrodes that are disposed in the first insulating layer and the top surface of which is exposed from the bottom surface of the first concavity; (D) an information storage layer that is formed on the side walls and the bottom surfaces of the first concavity and the second concavity; and (E) a conductive material layer that is filled in a space surrounded with the information storage layer in the second concavity.