Non-volatile Memory with Multi-Gear Control and Data Folding
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current flash memory systems face inefficiencies in updating data, particularly due to the need to erase and rewrite entire blocks, which leads to increased erase time and frequency, and the challenge of managing system control and directory data efficiently in a non-volatile memory environment.
Innovation Solution
A memory system with a controller that manages data storage by performing binary write operations and folding data from a binary format to a multi-state format, allowing for interleaved binary write operations and background folding operations, optimizing data transfer and storage across both binary and multi-state memory sections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If flash memory uses block-based erase and rewrite operations, then data can be stored in non-volatile memory, but erase time and erase frequency increase
Solution Approach 1:
The memory system is divided into two distinct sections: a first section for binary format data and a second section for multi-state format data. This segmentation allows different data types to be stored using optimized operations for each section, reducing the need for frequent block erases in the binary section while maintaining non-volatile storage capability.
Solution Approach 2:
The patent changes the storage parameter from binary format (0 or 1) to multi-state format (multiple discrete threshold voltage levels). This parameter change enables more data to be stored per cell and allows for more efficient update operations, reducing erase frequency and time.
2Reliability
If flash memory uses block-based erase and rewrite operations, then data can be stored in non-volatile memory, but erase frequency increases
Solution Approach 1:
By segmenting the memory into binary and multi-state sections, the system can store frequently updated data in the binary section using fast write operations, while maintaining non-volatile storage in the multi-state section with lower erase frequency.
Solution Approach 2:
The parameter change to multi-state format enables more data to be stored per cell, reducing the total number of cells needed and consequently reducing the erase frequency required to maintain data integrity in non-volatile memory.
3Ease of operation
If flash memory stores data in binary format only, then data transfer is simple, but data management efficiency decreases
Solution Approach 1:
The system introduces multi-state format as an additional parameter for data storage, enabling more data to be stored per cell and improving data management efficiency for frequently accessed data, while maintaining binary format for simple data transfer operations.
Solution Approach 2:
The memory system dynamically switches between binary and multi-state formats based on data access patterns and requirements, optimizing both data transfer simplicity and management efficiency for different types of data.
4Quantity of substance
If flash memory uses multi-state format for all data, then storage density increases, but data transfer complexity increases
Solution Approach 1:
By segmenting the memory into binary and multi-state sections, the system maintains high storage density in the multi-state section for frequently accessed data, while keeping the binary section for simple data transfer operations, thus balancing storage density and transfer complexity.
Solution Approach 2:
The system dynamically selects between binary and multi-state formats based on data characteristics and access patterns, optimizing the balance between storage density and data transfer complexity for different operational scenarios.
Data Source
AI summary
A memory system and methods of its operation are presented. The memory system includes a controller and a non-volatile memory circuit, where the non-volatile memory circuit has a first section, where data is stored in a binary format, and a second section, where data is stored in a multi-state format. The memory system receives data from the host and performs a binary write operation of the received data to the first section of the non-volatile memory circuit. The memory system subsequently folds portions of the data from the first section of the non-volatile memory to the second section of the non-volatile memory, wherein a folding operation includes reading the portions of the data from the first section rewriting it into the second section of the non-volatile memory using a multi-state programming operation. The controller determines to operate the memory system according to one of multiple modes. The modes include a first mode, where the binary write operations to the first section of the memory are interleaved with folding operations at a first rate, and a second mode, where the number of folding operations relative to the number of the binary write operations to the first section of the memory are performed at a higher than in the first mode. The memory system then operates according to determined mode. The memory system may also include a third mode, where folding operations are background operations executed when the memory system is not receiving data from the host.