Nonvolatile Memory Electron Trap Layer Dielectric Breakdown
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Solution Overview
Problem
Conventional nonvolatile memory devices face dielectric breakdown and damage to active regions due to miniaturization, which reduces the distance between the active region and the control gate electrode, leading to high electric fields during writing or erasing operations.
Innovation Solution
The nonvolatile memory device incorporates an intergate insulating film with an electron trap layer and insulating layers, which are strategically placed between the floating gate electrodes and tunnel insulating films, and within the element isolation trench, to effectively trap electrons and reduce the electric field, thereby preventing dielectric breakdown and damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If miniaturization is implemented to reduce device size, then device dimensions are reduced, but the distance between active region and control gate electrode decreases leading to high electric field and dielectric breakdown
Solution Approach 1:
An electron trap layer is introduced as an intermediary between the floating gate electrode and the control gate electrode. This layer captures excess electrons that would otherwise create high electric fields, thereby preventing dielectric breakdown while allowing miniaturization to proceed.
Solution Approach 2:
The electrical properties of the intergate insulating film are changed by incorporating an electron trap layer with specific trapping characteristics. This modifies the electric field distribution and electron behavior in the intergate region, enabling reliable operation at reduced dimensions.
2Reliability
If conventional element isolation insulating film is used, then active regions are isolated, but manufacturing process becomes more complex
Solution Approach 1:
The element isolation insulating film formation process is merged with the intergate insulating film formation process. The same insulating film layers are formed to serve both as intergate insulation and as element isolation, eliminating redundant manufacturing steps while maintaining proper isolation of active regions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution efficiently traps electrons between the active region and the control gate electrode, reducing the risk of dielectric breakdown and damage, while also eliminating the need for a conventional element isolation insulating film, thereby simplifying the manufacturing process and enhancing device reliability.
Implementation Method 1
The nonvolatile memory device includes an intergate insulating film including a first insulating layer of a first insulating material, an electron trap layer of a second insulating material on the first insulating layer, and a second insulating layer of the first insulating material on the electron trap layer
Data Source
AI summary
According to one embodiment, a nonvolatile memory device includes a substrate, first and second tunnel insulating films, first and second floating gate electrodes, an intergate insulating film and a control gate electrode. The substrate has first and second active regions isolated from each other by an element isolation trench. The first and second tunnel insulating films are located in the first and second active regions, respectively. The first and second floating gate electrodes are located on the first and second tunnel insulating films, respectively. The intergate insulating film includes a first insulating layer of a first insulating material, an electron trap layer of a second insulating material on the first insulating layer, and a second insulating layer of the first insulating material on the electron trap layer. The control gate electrode is located on the intergate insulating film.