Non-Volatile Memory Inter-Gate Dielectric Structure
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Solution Overview
Problem
Existing non-volatile memory technologies face challenges in increasing gate coupling ratio and transconductance due to thin inter-gate dielectric layers, which degrade data retention and are not compatible with high dielectric constant materials, making it difficult to enhance performance within existing manufacturing processes.
Innovation Solution
A non-volatile memory structure is developed with a charged nitride layer, including a first and second oxide layer and a charged nitride layer between them, where the nitride layer is treated with an N-type dopant or electrons to enhance dielectric constant and conductivity, forming an inter-gate dielectric structure that increases gate coupling ratio and transconductance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a high dielectric constant material is used to increase capacitance, then the gate coupling ratio is improved, but compatibility with existing memory processes deteriorates
Solution Approach 1:
The patent uses a composite dielectric structure where a second dielectric layer with higher dielectric constant is sandwiched between first and third dielectric layers. This configuration enables the use of high-k materials to improve gate coupling ratio while the outer layers maintain compatibility with existing manufacturing processes, thus resolving the contradiction between performance improvement and process compatibility.
2Reliability
If the area of the inter-gate dielectric layer is increased to improve gate coupling ratio, then transconductance is improved, but manufacturing difficulty increases
Solution Approach 1:
The patent enhances the dielectric properties locally within the inter-gate region by introducing a second dielectric layer with higher dielectric constant at the critical interface area. This localized improvement in dielectric quality increases transconductance and gate coupling ratio without requiring an increase in the overall area of the inter-gate dielectric layer, thus avoiding increased manufacturing difficulty.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The charged nitride layer enhances the conductivity and capacitance of the inter-gate dielectric structure, resulting in improved gate coupling ratio and transconductance, enabling higher performance in non-volatile memory devices without compromising data retention.
Implementation Method 1
performing a treatment to the nitride layer to get a higher dielectric constant
Implementation Method 2
the nitride layer is treated with an N-type dopant or electrons to enhance dielectric constant and conductivity
Data Source
AI summary
The present invention provides a manufacturing method of a non-volatile memory including forming a gate dielectric layer on a substrate; forming a floating gate on the gate dielectric layer; forming a first charge blocking layer on the floating gate; forming a nitride layer on the first charge blocking layer; forming a second charge blocking layer on the nitride layer; forming a control gate on the second charge blocking layer; and performing a treatment to the nitride layer to get a higher dielectric constant.