Non-volatile Memory Device With Intersecting Electrodes
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Solution Overview
Problem
Non-volatile memory devices with multi-layer structures face challenges in connecting and selecting memory cells due to the complexity of integrating horizontal and vertical electrodes, which hinders improvements in operating speed and integration density.
Innovation Solution
A non-volatile memory device design featuring horizontal and vertical electrodes that intersect at right angles, with a data storage layer and reaction prevention layers positioned at the intersection points, utilizing materials like aluminum oxide, bismuth oxide, and oxinitride layers to store data by varying electrical resistance and prevent unwanted reactions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If multi-layer structure is used to increase integration density, then memory capacity increases, but connection and selection of memory cells becomes difficult
Solution Approach 1:
The memory device is segmented into multiple independent layers, each layer containing complete memory cell structures with word lines and bit lines. This segmentation allows each layer to be independently accessed and controlled, simplifying the connection and selection processes despite having multiple layers stacked vertically.
Solution Approach 2:
The patent transitions from planar memory cell arrangement to three-dimensional stacked layers. Memory cells are arranged in multiple layers along the vertical dimension, with each layer having its own electrode connections. This dimensional change increases memory capacity while maintaining ease of operation through independent layer access via through-electrode connections.
2Quantity of substance
If more memory cells are integrated in the same space, then integration density improves, but device complexity increases due to electrode connections
Solution Approach 1:
Each memory layer is segmented as an independent unit with dedicated word lines and bit lines. The through-electrode connections are segmented to connect only the necessary electrodes between layers, reducing the overall complexity compared to fully interconnected multi-layer structures.
Solution Approach 2:
The through-electrode connections serve multiple functions: they act as bit lines for upper layers, provide electrical connections between layers, and serve as structural support elements. This multi-functionality reduces the number of separate connection elements needed, thereby reducing device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances memory cell integration density and operating speed by allowing for efficient data storage and programming through localized resistance changes, while preventing silicide formation and maintaining structural stability.
Implementation Method 1
The at least one data storage layer is located in regions in which the at least one vertical electrode crosses the at least one horizontal electrode, and stores data by varying its electrical resistance
Implementation Method 2
The at least one reaction prevention layer is located in the regions in which the at least one vertical electrode crosses the at least one horizontal electrode
Data Source
AI summary
Provided is a non-volatile memory device including at least one horizontal electrode, at least one vertical electrode, at least one data storage layer and at least one reaction prevention layer. The least one vertical electrode crosses the at least one horizontal electrode. The at least one data storage layer is located in regions in which the at least one vertical electrode crosses the at least one horizontal electrode, and stores data by varying its electrical resistance. The at least one reaction prevention layer is located in the regions in which the at least one vertical electrode crosses the at least one horizontal electrode.