Nonvolatile Memory Using LaNiO3 Buffer and SrZrO3 Resistor
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Solution Overview
Problem
Conventional methods for fabricating resistor layers in resistive non-volatile memory devices are costly and unsuitable for large-area films, limiting their scalability and mass production potential.
Innovation Solution
A non-volatile memory structure comprising a bottom electrode, a buffer layer of LaNiO3 film, and a resistor layer of SrZrO3 film doped with V, Cr, Fe, or Nb, with a platinum film acting as a bottom electrode to reduce operating voltage and improve switching speed, fabricated using E-gun evaporation and RF magnetron sputtering processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional flame fusion or pulse laser sputtering is used to form Cr doped SrTiO3 single crystal resistor layer, then reversible resistance switching is achieved, but fabrication cost increases and large-area film formation becomes difficult
Solution Approach 1:
The invention changes the material composition parameters by using SrZrO3 doped with V, Cr, Fe, or Nb instead of conventional SrTiO3, and modifies the fabrication process parameters by employing E-gun evaporation and RF magnetron sputtering at lower costs to achieve the desired resistance switching properties
Solution Approach 2:
The invention replaces expensive single crystal fabrication methods with more economical thin film deposition techniques, using commercially available target materials and standard semiconductor fabrication equipment to achieve comparable functional performance at reduced cost
2Reliability
If single crystal structure of SrTiO3 is formed with flame fusion, then Cr doped SrTiO3 single crystal is obtained, but fabrication cost becomes high
Solution Approach 1:
The invention changes the material composition from SrTiO3 to SrZrO3 with different dopants, and modifies the fabrication method from flame fusion to E-gun evaporation and RF magnetron sputtering, achieving resistance switching at lower fabrication costs
Solution Approach 2:
The invention replaces the high-energy flame fusion process with lower-energy vapor deposition techniques (E-gun evaporation and RF magnetron sputtering), substituting a thermally intensive mechanical process with controlled material deposition from vapor phase
3Manufacturing precision
If pulse laser sputtering is used to grow Cr doped SrZrO3 film, then resistor layer is formed, but large-area film formation is not suitable
Solution Approach 1:
The invention employs RF magnetron sputtering, a versatile deposition technique that can produce high-quality thin films over large areas, making the process suitable for both small and large-scale production requirements
Solution Approach 2:
The invention changes the deposition method from pulse laser sputtering to RF magnetron sputtering, which offers better uniformity and scalability for large-area film formation while maintaining acceptable film quality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure achieves lower operating voltages, faster switching times, and improved scalability, making it more suitable for mass production and integration in advanced integrated circuits with low power consumption.
Implementation Method 1
fabricated using E-gun evaporation and RF magnetron sputtering processes
Implementation Method 2
fabricated using E-gun evaporation and RF magnetron sputtering processes
Data Source
AI summary
Non-volatile memories formed on a substrate and fabrication methods are disclosed. A bottom electrode comprising a metal layer is disposed on the substrate. A buffer layer comprising a LaNiO3 film is disposed over the metal layer. A resistor layer comprising a SrZrO3 film is disposed on the buffer layer. A top electrode is disposed on the resistor layer.