Nonvolatile Memory Page Buffer Using Static and Dynamic Latches

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Current nonvolatile memory devices face challenges in reducing size and power consumption, particularly in the design of page buffers and latch circuits, which are essential for efficient data storage and retrieval.

Innovation Solution

The implementation of a nonvolatile memory device that incorporates a static latch and dynamic latches with a shared floating node, where data is transferred and stored using write and read transistors, and a storage capacitor, allowing for reduced size and improved power efficiency through optimized transistor configurations and refresh operations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If dynamic latches are used in page buffer design, then power consumption is reduced, but device size is increased due to additional refresh circuitry

Engineering Contradiction:
Improvepower consumptionVSAvoiddevice size
Core Design Contradiction:
Use of energy by moving objectVSArea of stationary object

Solution Approach 1:

The patent merges the static latch and dynamic latch into a unified structure where the static latch serves as the data storage element and the dynamic latch serves as the transfer buffer. This integration allows the circuit to benefit from both static latch stability and dynamic latch power efficiency during active operations, while sharing common circuit elements like bit line connections and control logic to minimize area overhead

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent implements a hybrid latch system that dynamically switches between static and dynamic latch modes based on operational requirements. During data input and processing phases, the dynamic latch is activated for low-power operation, while during data retention phases, the static latch maintains data stability. This dynamic operation allows the system to optimize power consumption without requiring full refresh circuitry for the entire page buffer

Inventive Principle:
Principle #15Dynamics

2Area of stationary object

If latch size is reduced to decrease device area, then device size is reduced, but power consumption increases due to higher switching activity

Engineering Contradiction:
Improvedevice areaVSAvoidpower consumption
Core Design Contradiction:
Area of stationary objectVSUse of energy by moving object

Solution Approach 1:

The patent segments the latch circuit into distinct functional blocks: a static latch for data storage, a dynamic latch for data transfer, and associated control circuitry. This segmentation allows each component to be optimized independently - the static latch uses minimal transistors for storage while the dynamic latch uses efficient transfer paths, reducing total area while maintaining low power consumption through specialized design of each segment

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent applies different design qualities to different parts of the latch circuit. The static latch portion uses high-stability design with stronger transistor sizing for data retention, while the dynamic latch portion uses high-speed, low-power design with optimized switching characteristics. This local differentiation allows the overall circuit to achieve both area reduction and power efficiency by matching design characteristics to functional requirements

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS8982618B2Nonvolatile memory device and related method of operation
Publication Date: 2015.03.17 SAMSUNG ELECTRONICS CO LTD
  • US8982618B2 patent drawing
  • US8982618B2 patent drawing
  • US8982618B2 patent drawing

AI summary

A nonvolatile memory device comprises a nonvolatile memory chip comprising a static latch, first and second dynamic latches that receive the data stored in the static latch through a floating node, and a memory cell configured to store multi-bit data. The nonvolatile memory device performs a refresh operation on the first dynamic latch where externally supplied first single bit data is stored in the first dynamic latch, performs a refresh operation on the second dynamic latch where externally supplied second single bit data is stored in the second dynamic latch, and programs the memory cell using the data stored in the first and second dynamic latches after the first and second single bit data are stored in the respective first and second dynamic latches.