Non-volatile Memory Device Multi-bit Storage Circuit

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Solution Overview

Problem

Existing non-volatile memory devices require a large storage circuit for storing one-bit data, which becomes impractical for handling multiple bits, as each bit necessitates a separate storage circuit, leading to size inefficiencies.

Innovation Solution

The configuration includes a differential amplifier, driving transistor, current mirrors, and inverters, allowing for a shared storage circuit that can handle multiple bits by using current mirrors and resistive elements to differentiate and read data based on current magnitudes, reducing the overall size of the storage circuit.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If separate storage circuits are used for each bit, then data storage capability is improved, but device area increases

Engineering Contradiction:
Improvedata storage capabilityVSAvoiddevice area
Core Design Contradiction:
Quantity of substanceVSArea of stationary object

Solution Approach 1:

The patent merges multiple storage circuits into a single shared storage circuit by using current mirrors to differentiate between multiple bits. The storage circuit shares common components (transistors, resistors) among multiple bits, while current mirrors create distinct current paths for each bit, enabling multi-bit storage in a compact area.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The storage circuit is designed to serve multiple functions simultaneously - it can store multiple bits of data using the same physical circuitry. The current mirror configuration allows the circuit to differentiate between multiple bits (0 or 1 for each bit position) by comparing current magnitudes, making the storage circuit universal for multi-bit operations.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Quantity of substance

If hot carrier injection is used to change transistor characteristics, then data storage is achieved, but manufacturing precision requirements increase

Engineering Contradiction:
Improvedata storageVSAvoidtransistor characteristic consistency
Core Design Contradiction:
Quantity of substanceVSManufacturing precision

Solution Approach 1:

The patent uses hot carrier injection to change the electrical parameters (threshold voltage, drain current) of transistors dynamically after manufacturing. This allows data storage by modifying transistor characteristics rather than relying on precise manufacturing variations, thereby reducing manufacturing precision requirements while achieving reliable data storage.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enables efficient storage and reading of multiple bits using a compact storage circuit, reducing the size requirements and allowing for scalable non-volatile memory devices.

Implementation Method 1

Some known non-volatile memory devices employ hot carrier injection into transistors. This kind of non-volatile memory device includes as memory elements a first and a second transistor that have paired characteristics in their initial state and the characteristics of one of the transistors are changed by hot carrier injection.

Methodology Applied
Scientific EffectHot carrier injection:

Data Source

PatentUS20250006276A1Non-volatile memory device
Publication Date: 2025.01.02 ROHM CO LTD
  • US20250006276A1 patent drawing
  • US20250006276A1 patent drawing
  • US20250006276A1 patent drawing

AI summary

A non-volatile memory device includes: a first current mirror having a reference element configured as a memory element for which a program operation can be performed, and a data element configured as the memory element and targeted by the program operation; a reference current generator connected to the data element and configured to generate a reference current; and a storage circuit having the data element and the reference current generator. The storage circuit can read data based on the magnitude relationship between the current flowing through the data element and the reference current.