Nonvolatile Memory On-Chip Management for Data Reliability
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Solution Overview
Problem
Highly integrated and high-capacity semiconductor storage devices face reliability issues due to reduced scale and structural changes, leading to potential damage and degradation of stored data.
Innovation Solution
A nonvolatile memory device with a controller that performs read operations and stores information about on-chip management in a register, allowing for enhanced data reliability through selective use of on-chip management during read operations based on the count of target memory cells.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If highly integrated and high capacity storage devices are used, then manufacturing costs decrease and storage capacity increases, but reliability of stored data deteriorates due to reduced scale and structural changes
Solution Approach 1:
The patent performs preliminary detection of threshold voltage variations before executing read operations. The controller detects threshold voltage shifts in memory blocks and proactively adjusts read reference voltages or applies compensation values beforehand, preventing data read errors before they occur. This preliminary action ensures reliable data retrieval despite the reduced device scale and structural changes in highly integrated storage devices.
2Reliability
If on-chip management is performed to improve read data accuracy, then reliability of read operations improves, but device complexity increases
Solution Approach 1:
The patent implements self-service by enabling the nonvolatile memory device to autonomously detect threshold voltage variations and perform self-compensation during read operations. The memory device monitors its own state, detects voltage shifts, and adjusts read operations without requiring complex external controller intervention. This self-service approach improves read reliability while minimizing the increase in overall device complexity by distributing intelligence to the memory device itself.
3Productivity
If the number of memory cells is reduced to increase integration, then manufacturing efficiency improves, but precision of data storage deteriorates
Solution Approach 1:
The patent addresses precision degradation by dynamically changing operational parameters, specifically threshold voltages and read reference voltages. When memory cell density increases and precision deteriorates, the system detects threshold voltage variations and adjusts read reference voltages or applies compensation values to maintain accurate data retrieval. This parameter adjustment compensates for the reduced precision inherent in highly integrated memory structures.
Data Source
AI summary
A storage device includes a nonvolatile memory device and a controller configured to generate a read command according to a request of an external host device and transmit the read command to the nonvolatile memory device. The nonvolatile memory device is configured to perform a read operation in response to the read command, to output read data to the controller, and to store information of the read operation in an internal register.