Nonvolatile Memory Device Parallel Electric Field
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Solution Overview
Problem
NAND flash memory faces challenges such as downsizing limitations and increasing process costs due to decreasing minimum line widths, and existing nonvolatile memory devices with resistance change materials do not always achieve optimal performance characteristics.
Innovation Solution
A nonvolatile memory device with a memory layer that changes resistance when an electric field or current is applied, featuring a matrix configuration of first electrodes and probe electrodes with a changeable positional relationship, allowing for parallel application of electric fields and currents to enhance memory density and material utilization.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If conventional probe memory applies electric field perpendicular to recording layer, then simple structure is achieved, but memory density and performance characteristics are limited
Solution Approach 1:
The patent transitions from perpendicular electric field application (conventional probe memory) to parallel electric field application relative to the recording layer. By applying the electric field in a direction parallel to the major surface of the recording layer through the side surface of the cylindrical electrode, the invention achieves improved memory performance and higher density while maintaining structural simplicity.
2Quantity of substance
If minimum line widths are decreased to increase memory capacity, then memory density improves, but process costs increase and downsizing limitations occur
Solution Approach 1:
The patent changes the fundamental parameter of electric field application direction from perpendicular to parallel relative to the recording layer. This parameter change enables higher memory capacity without requiring further reduction of minimum line widths, thereby avoiding the associated increase in process costs and downsizing limitations.
Solution Approach 2:
By utilizing the side surface of the cylindrical electrode to apply electric field parallel to the recording layer, the invention effectively adds another dimension for data storage and access. This dimensional change increases memory capacity without constraining the minimum line width, thus avoiding the cost penalties associated with further miniaturization.
3Quantity of substance
If parallel electric field application is implemented through side surface of cylindrical electrode, then memory density and material utilization improve, but device structure becomes more complex
Solution Approach 1:
The cylindrical electrode serves multiple functions: it acts as both the recording electrode and the access electrode. The side surface of the cylindrical electrode is utilized for parallel electric field application, while the top surface maintains conventional perpendicular access capability. This multi-functionality increases memory density without requiring entirely new electrode structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves memory density and allows for the effective use of various materials, overcoming the limitations of conventional technologies by enabling high-density information recording with optimized resistance states.
Implementation Method 1
a memory layer (7) having a resistance changeable by performing at least one selected from applying an electric field and providing a current
Data Source
AI summary
A nonvolatile memory device, includes: a memory layer having a resistance changeable by performing at least one selected from applying an electric field and providing a current, the storage layer having a first major surface; a plurality of first electrodes provided on the first major surface; a plurality of probe electrodes disposed to face the plurality of first electrodes, the plurality of probe electrodes having a changeable relative positional relationship with the first electrodes; a drive unit connected to the plurality of probe electrodes to record information in the memory layer by causing at least the one selected from the electric field and the current between at least two of the plurality of first electrodes via the plurality of probe electrodes, the electric field having a component parallel to the first major surface, the current flowing in a direction having a component parallel to the first major surface.