Nonvolatile Memory Pre-Programming for Surface Mounting Threshold Shift
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Solution Overview
Problem
Nonvolatile semiconductor memory devices experience threshold voltage distribution changes during surface mounting technology, leading to potential uncorrectable errors and boot failures due to heat application, which existing methods fail to adequately address.
Innovation Solution
Pre-programming and re-programming of memory cells in nonvolatile memory devices to adjust threshold voltages before and after surface mounting, using verification and reference voltages to mitigate changes caused by heat, ensuring reliable operation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If surface mounting technology is applied to nonvolatile memory, then manufacturing efficiency is improved, but threshold voltage distribution changes occur causing boot failures
Solution Approach 1:
The patent applies preliminary action by pre-programming memory cells to a first threshold voltage distribution before surface mounting, and then re-programming them to a second threshold voltage distribution after mounting. This anticipates and compensates for the threshold voltage changes that occur during the high-temperature surface mounting process, preventing boot failures while maintaining manufacturing efficiency.
Solution Approach 2:
The patent changes the threshold voltage parameter of memory cells in two stages: first programming to a first threshold voltage, then re-programming to a second threshold voltage after surface mounting. This parameter change approach directly addresses the threshold voltage distribution changes caused by heat during mounting, resolving the contradiction between manufacturing efficiency and reliability.
2Reliability
If memory cells are programmed to higher threshold voltage before mounting, then boot failure is prevented, but programming complexity increases
Solution Approach 1:
The patent performs preliminary programming actions before surface mounting to establish the first threshold voltage distribution, then performs re-programming after mounting to establish the second threshold voltage distribution. This two-stage preliminary action approach prevents boot failures by anticipating threshold voltage changes while organizing the programming complexity into manageable sequential steps.
Solution Approach 2:
The patent implements feedback by verifying the threshold voltage distribution after surface mounting and using this information to determine the re-programming operation. The verification step provides feedback about the actual threshold voltage state, allowing the system to adjust the programming accordingly, thus managing complexity through informed decision-making.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces or prevents boot failures and improves data storage reliability by maintaining optimal threshold voltage distributions, even after surface mounting, thereby enhancing the overall performance of nonvolatile memory devices.
Implementation Method 1
a threshold voltage distribution of memory cells may be changed. This may cause an uncorrectable error or a boot fail
Data Source
AI summary
Methods of programming firmware in a data storage device include pre-programming memory cells included in at least one nonvolatile memory of a plurality of nonvolatile memories using a first verification voltage higher than a first reference voltage before a surface mounting technology is applied to the nonvolatile memories.