Nonvolatile Memory Programming Method for Program Disturbance Reduction
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Solution Overview
Problem
Current nonvolatile semiconductor memory devices face challenges in reducing program disturbance, particularly due to frequent programming of memory cells to the uppermost state, which affects data integrity and storage reliability.
Innovation Solution
The method involves a partial alternate programming manner where some page portions of a nonvolatile memory device are programmed alternately, while others are programmed sequentially, reducing the number of memory cells programmed to the uppermost state by controlling the row decoder and page buffer to select word lines in a specific order, thereby minimizing program disturbance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If sequential programming manner is used to program all page portions, then programming simplicity is maintained, but program disturbance increases due to frequent programming of memory cells to uppermost state
Solution Approach 1:
The patent segments the programming process into two distinct modes: alternate programming manner for first and second page portions, and sequential programming manner for third page portion. This segmentation allows optimization of program disturbance reduction for critical page portions while maintaining simplicity for less critical ones, resolving the contradiction between reliability improvement and control complexity.
Solution Approach 2:
The patent applies different programming strategies to different page portions based on their specific characteristics and requirements. The first and second page portions use alternate programming to minimize disturbance, while the third page portion uses sequential programming for simplicity. This local differentiation optimizes the balance between reliability and complexity for each region.
2Reliability
If alternate programming manner is used for all page portions, then program disturbance is reduced, but programming time increases
Solution Approach 1:
The patent applies alternate programming only partially to the first and second page portions rather than all page portions. The third page portion uses simpler sequential programming. This partial application of the more time-consuming alternate programming method achieves sufficient disturbance reduction where needed while avoiding unnecessary time consumption in other regions.
3Quantity of substance
If memory cells are programmed to uppermost state frequently, then data can be stored, but data integrity deteriorates due to program disturbance
Solution Approach 1:
The patent implements periodic alternate programming sequences for the first and second page portions, where word lines are selected in an alternating pattern rather than sequentially. This periodic action distributes the programming operations more evenly, reducing the frequency with which any single set of memory cells is programmed to the uppermost state, thereby maintaining data integrity while preserving storage capacity.
Data Source
AI summary
Provided is a method for programming a nonvolatile memory device, which includes memory cells arranged in a plurality of rows. The programming method includes alternately selecting word lines to program data at a first page portion and a second page portion associated with the memory cells. After the first and second page portions are programmed, the method includes programming data at a third page portion associated with the memory cells according to an order in which word lines are arranged. The word lines may be sequentially selected one by one from a word line adjacent to a ground selection line.