Nonvolatile Memory Programming via Simultaneous Positive and Negative Pulses

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Solution Overview

Problem

Nonvolatile memory devices face interference issues between adjacent memory cells, affecting their reliability and performance, particularly in programming and storage capacity.

Innovation Solution

A programming method for nonvolatile memory devices that involves applying simultaneous positive and negative pulses to selection and wordlines, with overlapping rising edges, to program memory cells effectively and verify successful programming, thereby reducing interference between adjacent cells.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional programming methods are used, then programming can be performed, but interference between adjacent memory cells occurs, reducing reliability

Engineering Contradiction:

Improvememory device reliabilityVSAvoidinterference between adjacent memory cells

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent applies periodic pulsing sequences to the selection line and control gate, using alternating positive and negative voltage pulses. This periodic action enables precise control of charge injection and removal from the floating gate, allowing programming operations to be performed with minimal disturbance to adjacent memory cells that are not currently being programmed.

Inventive Principle:

Principle #19Periodic action

Solution Approach 2:

The patent implements local quality by applying voltage pulses selectively to specific wordlines and selection lines corresponding to the memory cell being programmed. Adjacent memory cells receive different voltage conditions (e.g., 0V or different pulse sequences), creating localized programming conditions that prevent interference while maintaining the integrity of neighboring cells.

Inventive Principle:

Principle #3Local quality

2Productivity

If programming speed is increased, then productivity improves, but interference between adjacent cells increases, affecting reliability

Engineering Contradiction:

Improveprogramming speedVSAvoidprogramming reliability

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

The periodic pulsing sequence enables rapid programming by efficiently injecting and removing charges from the floating gate through controlled voltage transitions. The alternating positive and negative pulses create optimal conditions for charge transfer while maintaining precise temporal control, achieving high programming speed without compromising reliability.

Inventive Principle:

Principle #19Periodic action

Solution Approach 2:

The patent employs dynamic voltage control where the selection line and control gate voltages are continuously adjusted during the programming process. This dynamic approach allows the system to optimize charge injection efficiency at each stage of programming, maintaining high speed while preventing interference through real-time voltage modulation.

Inventive Principle:

Principle #15Dynamics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method enhances the reliability of nonvolatile memory devices by minimizing interference between adjacent memory cells, improving programming efficiency and storage capacity.

Implementation Method 1

a two-transistor Fowler-Nordheim NOR memory cell array

Methodology Applied

Scientific EffectFowler-Nordheim tunneling:

Data Source

PatentUS8634249B2Programming method for non-volatile memory device

Publication Date: 2014.01.21 SAMSUNG ELECTRONICS CO LTD

AI summary

A method of programming a nonvolatile memory device comprises applying positive pulses and negative pulses simultaneously to a memory cell array to program at least one memory cell included in the memory cell array.