Non-Volatile Memory Slow Ramp Compensation for Word-Line Programming
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The issue of voltage signals failing to reach their intended magnitude due to RC issues or signal line defects during programming in non-volatile memory, leading to failed programming processes or data errors.
Innovation Solution
Implementing a control circuit that tests the voltage during ramp-up and elongates the time period if the voltage does not reach the intended magnitude, ensuring accurate programming.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If voltage is applied to program memory cells, then programming operation is performed, but voltage may fail to reach intended magnitude due to RC issues or signal line defects
Solution Approach 1:
The control circuit monitors the actual voltage level during the programming operation and uses this feedback to determine whether the voltage reached the intended magnitude. If the voltage did not reach the expected level, the system can identify the programming failure and potentially retry or error-correct the operation.
Solution Approach 2:
The system performs a test of the applied voltage during the programming operation to check whether the voltage reached its intended magnitude before completing the programming sequence. This preliminary verification ensures that the voltage condition is satisfied before proceeding.
2Reliability
If voltage testing is performed during programming, then programming reliability is improved, but time period is elongated
Solution Approach 1:
The control circuit performs voltage testing at specific intervals during the programming operation rather than continuously. The system tests the voltage at predetermined times to determine if the intended magnitude was reached, which provides reliability verification while minimizing the time added compared to continuous monitoring.
3Manufacturing precision
If voltage ramp-up time is extended to ensure voltage reaches magnitude, then programming accuracy is improved, but operation time increases
Solution Approach 1:
The control circuit dynamically adjusts the voltage ramp-up process by monitoring actual voltage levels and extending the time period only when necessary. If the voltage reaches the intended magnitude quickly, the system completes the operation in the standard time frame. If voltage issues are detected, the system extends the ramp-up time to ensure accuracy.
Data Source
AI summary
Non-volatile memory cells are programmed by raising a voltage applied to a selected word line to a program voltage during a first time period of a programming process for selected non-volatile memory cells connected to the selected word line; programming the selected non-volatile memory cells using the program voltage during a second time period after the first time period; testing, during the first time period, whether the voltage applied to the selected word line is greater than one or more intermediate voltages; and elongating the first time period during the first time period if the voltage applied to the selected word line is not greater than one or more of the intermediate voltages.


