Nonvolatile Memory Read Voltage Determination via Dynamic Defense Code Selection

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Solution Overview

Problem

The existing methods for determining the optimum read voltage in nonvolatile memory systems are time-consuming as they require using all defense codes in a specific order, leading to reduced performance due to the gradual variation in threshold voltage distribution of memory cells.

Innovation Solution

A method that selects a subset of defense codes based on read voltage level determination information and read environment information to determine the optimal read voltage level, allowing for a more efficient read operation by using only the necessary codes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If all defense codes are used in a given order to determine the optimum read voltage, then the read voltage determination is comprehensive and accurate, but the read operation time is extended and system performance is reduced

Engineering Contradiction:
Improveread voltage determination accuracyVSAvoidread operation time
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The patent segments the complete set of defense codes into multiple groups, where each group contains a subset of defense codes. By selecting and executing only one group based on read environment information, the system divides the comprehensive verification process into manageable segments, reducing the number of codes that need to be executed while maintaining adequate read voltage determination accuracy.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent applies partial action by executing only a portion of the available defense codes rather than all of them. Based on read environment information (such as temperature, retention time, and program/erase cycle count), the system selectively executes a sufficient subset of defense codes that provides adequate read voltage determination without the overhead of running the complete set, thereby reducing read operation time while maintaining acceptable accuracy.

Inventive Principle:
Principle #16Partial or excessive action

2Reliability

If multiple defense codes are executed to determine the optimal read voltage level, then the read voltage determination is thorough, but the read operation speed is reduced

Engineering Contradiction:
Improveread voltage determination reliabilityVSAvoidread operation speed
Core Design Contradiction:
ReliabilityVSSpeed

Solution Approach 1:

The patent implements dynamic defense code selection by adjusting which defense codes are executed based on real-time read environment information. The system dynamically adapts the defense code execution strategy according to factors such as temperature, retention time, and program/erase cycle count, executing only the necessary subset of codes required for reliable read voltage determination under current conditions, thereby maintaining reliability while improving read operation speed.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent changes the parameter of defense code execution quantity based on read environment information. By monitoring environmental parameters and adjusting the number and type of defense codes executed accordingly, the system optimizes the balance between read voltage determination reliability and read operation speed, executing more codes when reliability is critical and fewer codes when speed is prioritized.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS10691346B2Read operation method of nonvolatile memory, memory system including the nonvolatile memory, and operation method of the memory system
Publication Date: 2020.06.23 SAMSUNG ELECTRONICS CO LTD
  • US10691346B2 patent drawing
  • US10691346B2 patent drawing
  • US10691346B2 patent drawing

AI summary

A read operation method of a nonvolatile memory includes selecting at least a first selection defence code from among a plurality of defence codes by using read voltage level determination information and read environment information, the read environment information including values respectively corresponding to a plurality of factors; determining a level of a read voltage for performing a read operation based on the first selection defence code; and performing the read operation by using the read voltage having the determined level.