Nonvolatile Memory Power-On Reset Signal Timing Control

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Solution Overview

Problem

In semiconductor memory devices, sudden power-offs can lead to data loss due to the reversal phenomenon where the power-on reset signal is generated earlier than the discharging signal, causing instability in data retention, especially when the PMOS transistor is sensitive to temperature or resistance changes.

Innovation Solution

A nonvolatile memory device with a power-on reset signal generation unit and a discharging signal generation unit, where the discharging signal is activated earlier than the power-on reset signal by incorporating a delay section to delay the first edge of the internal power-on reset signal, ensuring stable discharging of the word line during sudden power-offs.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If the power-on reset signal is generated based on the power supply voltage level without delay, then the reset signal is activated quickly to initialize internal elements, but the discharging signal may be generated after the reset signal during sudden power-off, causing data loss

Engineering Contradiction:
Improveactivation speed of power-on reset signalVSAvoiddata retention stability during sudden power-off
Core Design Contradiction:
SpeedVSReliability

Solution Approach 1:

The patent applies preliminary action by delaying the power-on reset signal activation. A delay circuit is introduced that prevents the power-on reset signal from being activated until a predetermined time has elapsed after the power supply voltage reaches its normal level. This ensures that during sudden power-off events, the discharging signal is generated before the power-on reset signal, allowing word lines to be discharged before initialization occurs, thereby preventing data loss while maintaining reliable operation under normal conditions.

Inventive Principle:
Principle #10Preliminary action

2Ease of manufacture

If the PMOS transistor is used in the power-on reset signal generation unit, then the circuit is simple and easy to manufacture, but the signal generation timing becomes unstable due to sensitivity to temperature and resistance changes

Engineering Contradiction:
Improvecircuit fabrication simplicityVSAvoidsignal timing stability
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent introduces a delay circuit as an intermediary component between the power supply voltage detection and the power-on reset signal activation. This delay circuit acts as a mediator that compensates for the timing instability caused by PMOS transistor sensitivity to temperature and resistance variations. The delay circuit ensures consistent timing relationships regardless of environmental conditions, maintaining signal timing stability while preserving the simplicity of the PMOS-based power-on reset signal generation unit.

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS9373366B2Nonvolatile memory device and method of operating the same
Publication Date: 2016.06.21 SK HYNIX INC
  • US9373366B2 patent drawing
  • US9373366B2 patent drawing
  • US9373366B2 patent drawing

AI summary

A nonvolatile memory device may include a power-on reset signal generation unit suitable for receiving a power supply voltage, and generating a power-on reset signal that changes based on the power supply voltage, and a discharging signal generation unit suitable for generating a discharging signal for discharging a word line to be activated earlier than an activation timing of the power-on reset signal when the power supply voltage decreases.