Nonvolatile Memory Programming Method Using Segmented Pulses
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Solution Overview
Problem
Conventional single page programming methods in nonvolatile memory devices lead to increased programming time and reduced reliability due to coupling and interference between memory cells, while multi-page methods are inefficient and difficult to apply in practice.
Innovation Solution
A method involving a common program pulse followed by different pulses tailored to target threshold voltages for each page, with the option to program cells to a lower voltage level and apply pulses until a predetermined number reach a reference threshold, minimizing interference and optimizing programming time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If single page program method is used, then programming operation is simple and fast, but coupling and interference between memory cells cause threshold voltage changes and reduce reliability
Solution Approach 1:
The patent segments the programming operation into multiple phases: a first programming phase that programs multiple pages simultaneously using a common program pulse, and a second programming phase that applies different program pulses to different pages based on their specific target threshold voltages. This segmentation allows the system to achieve both high programming speed and high reliability by addressing coupling and interference effects through phased operations.
2Reliability
If multi-page program method is used, then reliability is improved by reducing coupling interference, but programming time drastically increases
Solution Approach 1:
The patent merges the programming of multiple pages into a single first programming operation using a common program pulse, rather than programming pages sequentially. This combining approach reduces the total programming time while still managing coupling and interference effects through the structured two-phase process and selective application of different pulses in the second phase.
3Ease of operation
If common program pulse is applied to all pages, then programming operation is simplified and faster, but threshold voltages of neighboring cells change due to coupling
Solution Approach 1:
The patent applies local quality by differentiating the programming approach for different pages. After the initial common programming phase, the system identifies pages with threshold voltages that have changed due to coupling and applies different program pulses to those specific pages in the second programming phase. This allows the system to maintain simplicity for most pages while providing targeted precision where needed.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces programming time and minimizes threshold voltage changes between neighboring cells, enhancing the reliability and efficiency of the memory device by allowing for faster and more precise programming operations.
Implementation Method 1
A nonvolatile memory device stores data in memory cells by changing threshold voltages
Data Source
AI summary
A method of programming a nonvolatile memory includes: applying a common program pulse to program cells within each page of a memory region including two or more pages; applying one or more different program pulses to the program cells within each page of the memory region, according to target threshold voltages of the program cells; and programming each page of the memory region such that the program cells have their own target threshold voltages.