Nonvolatile Memory Temperature Throttling via Internal I/O
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Solution Overview
Problem
Nonvolatile memory devices experience operation errors due to increased resistance of memory cells at low temperatures, leading to data corruption and errors during initial device startup.
Innovation Solution
A method and device that include a temperature sensor and control circuit to detect low temperatures and perform specific input/output operations, either in response to external commands or internally, to increase the temperature of the memory cell array and prevent errors, involving periodic temperature detection and determination of external commands.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If the nonvolatile memory device operates at low temperature, then power consumption is reduced, but operation errors increase due to increased resistance of memory cells
Solution Approach 1:
The patent performs preliminary actions by executing internal input/output operations (such as read operations) before normal operations when low temperature is detected. These preliminary operations generate heat in advance to increase the temperature of the memory cell array, thereby preventing operation errors before they occur during subsequent normal operations.
Solution Approach 2:
The patent implements periodic temperature detection and conditional execution of internal input/output operations. The control circuit periodically monitors the temperature of the memory cell array and periodically executes temperature-compensation operations when the temperature falls below a threshold, creating a cyclic pattern of temperature management that balances power consumption and reliability.
2Reliability
If internal input/output operations are performed to increase temperature, then operation reliability is improved, but device complexity increases due to additional control circuitry and temperature sensing
Solution Approach 1:
The control circuit is designed with multi-functionality, serving both as a command processor for external input/output operations and as a temperature management unit that detects low temperature conditions and executes internal input/output operations. This universal design avoids adding separate dedicated temperature control circuits, thereby limiting the increase in device complexity.
Solution Approach 2:
The nonvolatile memory device performs self-service by using its own internal resources (memory cell array, control circuit, and temperature sensor) to detect and correct low-temperature conditions. The device generates its own heat through internal operations and uses its own control logic to decide when to execute these operations, eliminating the need for external temperature management hardware.
3Productivity
If external input/output commands are always executed, then data processing efficiency is maintained, but temperature increase is insufficient when no external commands are available
Solution Approach 1:
When no external input/output commands are available, the control circuit executes internal input/output operations as preliminary actions to generate heat and increase the temperature of the memory cell array. These internal operations serve as preparatory measures to ensure the temperature reaches a level where subsequent external commands can be executed reliably.
Solution Approach 2:
The system dynamically adjusts its operation mode based on the availability of external commands and the current temperature. When external commands are available, the system executes them to maintain productivity. When external commands are not available but low temperature is detected, the system dynamically switches to executing internal input/output operations to increase temperature, creating a flexible and adaptive operational behavior.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effectively prevents operation errors by rapidly increasing the temperature of the memory cell array when low, ensuring reliable data retention and device functionality.
Implementation Method 1
A method and device are provided that include a temperature sensor and a control circuit to detect low temperatures
Implementation Method 2
performing an input/output operation, which corresponds to the external input/output command, on the memory cell array when the external input/output command exists and the current temperature is lower than the reference temperature
Data Source
AI summary
In a method of throttling temperature of a nonvolatile memory device including a memory cell array, a current temperature of the nonvolatile memory device may be detected periodically. The current temperature may be compared with a reference temperature. Whether an external input/output command, which is provided by a memory controller, exists may be determined when the current temperature is lower than the reference temperature. An input/output operation, which corresponds to the external input/output command, may be performed on the memory cell array when the external input/output command exists. A desired and/or alternatively predetermined internal input/output operation may be performed on the memory cell array regardless of a command from the memory controller when the external input/output command does not exist.