Nonvolatile Memory Voltage Drop Detection

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Solution Overview

Problem

Flash memory devices face reliability issues when the power supply voltage becomes unstable, leading to potential data loss and operational failures.

Innovation Solution

A nonvolatile memory device with a voltage drop detector that adjusts a comparison voltage based on the operation mode and temperature, generating a lock-out signal to initiate a recovery operation when the comparison voltage falls below a reference voltage, ensuring data reliability and preventing unnecessary recovery triggers.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a fixed comparison voltage is used for voltage drop detection, then the detection threshold remains constant, but recovery operations may be triggered unnecessarily under different operation modes or temperature conditions

Engineering Contradiction:
Improvedata reliabilityVSAvoidvoltage detection mechanism complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies dynamics by making the comparison voltage adjustable based on operation mode and temperature conditions. Instead of using a fixed comparison voltage, the system dynamically selects or adjusts the comparison voltage according to the current operation mode (program, read, erase) and temperature range, allowing the detection threshold to adapt to different operating conditions and prevent unnecessary recovery operations

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent implements parameter changes by modifying the comparison voltage parameter based on operation mode and temperature. The voltage detection mechanism changes the comparison voltage parameter to match different operation modes and temperature conditions, ensuring accurate voltage drop detection without triggering false recovery operations under varying operational parameters

Inventive Principle:
Principle #35Parameter changes

2Reliability

If recovery operation is performed frequently to ensure data reliability, then data integrity is maintained, but device wear increases and operational efficiency decreases

Engineering Contradiction:
Improvedata integrityVSAvoidoperational efficiency
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent applies feedback by implementing a intelligent detection mechanism that uses operation mode and temperature as feedback parameters to determine whether a recovery operation is truly necessary. The system continuously monitors the actual voltage drop against the dynamically adjusted comparison voltage, and only triggers recovery operations when the voltage drop exceeds the threshold appropriate for the current operating conditions, avoiding unnecessary recovery operations

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The patent implements preliminary action by pre-establishing multiple comparison voltages corresponding to different operation modes and temperature conditions before actual voltage drop detection occurs. This allows the system to quickly determine whether recovery is needed without performing unnecessary recovery operations, thereby maintaining data integrity while preserving operational efficiency

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS10522230B2Nonvolatile memory device having a recovery operation conditioned on an operation mode, operation method thereof, and storage device including the same
Publication Date: 2019.12.31 SAMSUNG ELECTRONICS CO LTD
  • US10522230B2 patent drawing
  • US10522230B2 patent drawing
  • US10522230B2 patent drawing

AI summary

A method of operating a nonvolatile memory device is provided. The nonvolatile memory device includes a memory cell array including a plurality of memory cells. The method includes: the nonvolatile memory device determining an operation mode based on the received command, the nonvolatile memory device generating a comparison voltage based on the determined operation mode, the nonvolatile memory device comparing the comparison voltage with a reference voltage to generate a result, and the nonvolatile memory device performing a recovery operation on at least one of the memory cells depending on the result.